BSS138K
50V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
50V
R
DS(ON)
Max
3.5Ω @ V
GS
= 10V
I
D
Max
T
A
= +25°
C
0.31A
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Load Switch
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
D
D
G
ESD Protected Gate
Gate Protection
Diode
G
S
S
Top View
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
BSS138K-7
BSS138K-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
38K = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: F = 2018)
M = Month (ex: 9 = September)
38K
22K
Date Code Key
Year
Code
Month
Code
2018
F
Jan
1
2019
G
Feb
2
Mar
3
2020
H
Apr
4
YM
2021
I
May
5
2022
J
Jun
6
Jul
7
2023
K
Aug
8
2024
L
Sep
9
Oct
O
2025
M
Nov
N
2026
N
Dec
D
BSS138K
Document number: DS39383 Rev. 2 - 2
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April 2018
© Diodes Incorporated
BSS138K
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Continuous Drain Current (Note 6) V
GS
= 10V
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
Value
50
±20
0.31
0.25
0.5
0.8
Unit
V
V
A
A
A
NEW PRODUCT
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
θJA
P
D
R
θJA
T
J,
T
STG
Value
0.38
338
0.54
237
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
50
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.1
1.3
0.8
23.2
3.1
2.2
69
0.45
0.95
0.10
0.14
3.2
2.5
13.8
7.6
8.8
2.6
Max
—
1
±10
1.5
3.5
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
Ω
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 50V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 0.22A
V
GS
= 0V, I
D
= 0.22A
T
J
= +25°
C
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 25V, I
D
= 0.2A
V
DS
= 25V, V
GS
= 10V,
R
G
= 50Ω, I
D
= 0.2A
I
F
= 0.2A, di/dt = 100A/μs
I
F
= 0.2A, di/dt = 100A/μs
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1‖ x 1‖ FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
BSS138K
Document number: DS39383 Rev. 2 - 2
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April 2018
© Diodes Incorporated
BSS138K
0.8
0.6
V
GS
= 4V
V
GS
= 3V
V
DS
= 5.0V
V
GS
= 10V
V
GS
= 6V
V
GS
= 5V
0.5
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
0.6
0.4
T
A
= 150°
C
T
A
= 125°
C
0.4
V
GS
= 2.5V
0.3
NEW PRODUCT
0.2
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
0.2
V
GS
= 2V
V
GS
= 1.8V
0.1
0.0
0
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
1
5
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3.5
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (
)
2.2
2.8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
2.6
2.4
2.2
I
D
= 0.22A
2
1.8
2
1.8
1.6
1.4
1.2
1
0
4
8
12
16
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
V
GS
= 10V
1.6
V
GS
= 10V
1.4
1.2
1
0
0.2
0.4
0.6
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 10V
0.8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
5
4.5
2
1.8
R
DS(ON)
, DRAIN-SOURCE
O N-RESISTANCE (NORMALIZED)
I
D
= 0.22A
4
3.5
3
T
A
= 150°
C
T
A
= 125°
C
1.6
V
GS
= 4.5V
1.4
1.2
1
0.8
0.6
-50
I
D
= 0.22A
2.5
2
1.5
1
0.5
0
0
0.2
0.4
0.6
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.8
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
BSS138K
Document number: DS39383 Rev. 2 - 2
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BSS138K
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
3
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.4
)
V
(
E
G
A
T 1.2
L
O
V
D
L
O
H
S
1
E
R
H
T
E
T
A
G 0.8
,
h
)
V
t
(
S
G
2.5
V
GS
= 4.5V
I
D
= 0.22A
I
D
= 1mA
2
V
GS
= 10V
I
D
= 250µA
NEW PRODUCT
1.5
I
D
= 0.22A
1
0.5
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0.6
-50
0.8
100
f=1MHz
0.6
C
T
, JUNCTION CAPACITANCE (pF)
I
S
, SOURCE CURRENT (A)
C
iss
0.4
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
10
T
A
= -55°
C
0.2
C
oss
C
rss
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1
0
10
20
30
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
R
DS(on)
Limited
50
10
1
V
GS
V
GS
, GATE-SOURCE VOLTAGE
(V)
GATE THRESHOLD VOLTAGE
(V)
8
I
D
, DRAIN CURRENT (A)
DC
0.1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
6
4
V
DS
= 25V
I
D
= 0.2A
0.01
T
J (m ax )
= 150°
C
T
C
= 25°
C
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
P
W
= 1ms
P
W
= 100µ
s
2
0
0
0.2
0.4
0.6
0.8
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
1
0.001
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
BSS138K
Document number: DS39383 Rev. 2 - 2
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© Diodes Incorporated
BSS138K
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
NEW PRODUCT
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
D = Single Pulse
R
JA
= 321°
C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100
1000
0.001
0.000001
0.00001
BSS138K
Document number: DS39383 Rev. 2 - 2
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April 2018
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