TSM120NA03CR
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 39A, 11.7mΩ
FEATURES
● Low R
DS(ON)
to minimize conductive loss
● Low gate charge for fast power switching
● 100% UIS and R
g
tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
R
DS(on)
(max)
Q
g
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
V
GS
= 10V
V
GS
= 4.5V
VALUE
30
11.7
mΩ
14.9
4.5
nC
UNIT
V
APPLICATIONS
● DC-DC Converters
● Battery Power Management
● ORing FET/Load Switch
PDFN56
Note:
MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
Total Power Dissipation
Total Power Dissipation
(Note 2)
(Note 1)
SYMBOL
V
DS
V
GS
T
C
= 25°C
T
A
= 25°C
I
D
I
DM
I
AS
E
AS
T
C
= 25°C
T
C
= 125°C
T
A
= 25°C
T
A
= 125°C
P
D
P
D
T
J
, T
STG
LIMIT
30
±20
39
11
156
15.6
36.5
33
6.6
2.6
0.5
- 55 to +150
UNIT
V
V
A
A
A
mJ
W
W
°C
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
LIMIT
3.8
48
UNIT
°C/W
°C/W
Thermal Performance Note:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is
determined by the user’s board design.
1
Version: B1610
TSM120NA03CR
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
Drain-Source On-State Resistance
(Note 3)
CONDITIONS
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= 30V
V
GS
= 0V, V
DS
= 30V
T
J
= 125°C
V
GS
= 10V, I
D
= 11A
V
GS
= 4.5V, I
D
= 11A
(Note 3)
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
MIN
30
1.2
--
--
--
--
--
--
TYP
--
1.9
--
--
--
8.3
11.9
35
MAX
--
2.5
±100
1
100
11.7
14.9
--
UNIT
V
V
nA
µA
R
DS(on)
g
fs
mΩ
S
Forward Transconductance
Dynamic
(Note 4)
V
DS
= 5V, I
D
= 11A
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching
(Note 4)
V
GS
= 10V, V
DS
= 15V,
I
D
= 11A
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 11A
Q
g
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
R
g
--
--
--
--
--
--
--
0.5
9.2
4.5
1.9
1.7
562
144
50
1.7
--
--
--
--
--
--
--
3.4
Ω
pF
nC
V
GS
= 0V, V
DS
= 15V
f = 1.0MHz
f = 1.0MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Forward Voltage
(Note 3)
t
d(on)
V
GS
= 10V, V
DS
= 15V,
I
D
= 7A, R
G
= 10Ω,
t
r
t
d(off)
t
f
--
--
--
--
8.4
4.3
22.4
3.1
--
--
--
--
ns
V
GS
= 0V, I
S
= 11A
I
S
= 11A ,
dI/dt = 100A/μs
V
SD
t
rr
Q
rr
--
--
--
--
14.7
7.3
1.2
--
--
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
2.
3.
4.
Silicon limited current only.
L = 0.3mH, V
GS
= 10V, V
DS
= 25V, R
G
= 25Ω, I
AS
= 15.6A, Starting T
J
= 25°C
Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
TSM120NA03CR RLG
PACKAGE
PDFN56
PACKING
2,500pcs / 13” Reel
2
Version: B1610
TSM120NA03CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Output Characteristics
30
30
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=4V
V
GS
=3.5V
Transfer Characteristics
I
D
, Drain Current (A)
18
I
D
, Drain Current (A)
24
24
18
12
12
25℃
6
150℃
-55℃
0
1
2
3
4
6
V
GS
=3V
0
0
1
2
3
4
0
V
DS
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
Gate-Source Voltage vs. Gate Charge
10
R
DS(ON)
, Drain-Source On-Resistance (Ω)
On-Resistance vs. Drain Current
0.016
V
GS
, Gate to Source Voltage (V)
0.014
V
GS
=4.5V
0.012
0.01
0.008
V
GS
=10V
0.006
0.004
0.002
0
6
12
18
24
30
8
V
DS
=15V
I
D
=11A
6
4
2
0
0
2
4
6
8
10
I
D
, Drain Current (A)
On-Resistance vs. Junction Temperature
Q
g
, Gate Charge (nC)
On-Resistance vs. Gate-Source Voltage
R
DS(on)
, Drain-Source On-Resistance (Ω)
0.03
0.025
0.02
0.015
I
D
=11A
0.01
0.005
0
3
4
5
6
7
8
9
10
R
DS(on)
, Drain-Source On-Resistance
(Normalized)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
-75
-50
-25
0
25
50
75
100 125 150
V
GS
=10V
I
D
=11A
T
J
, Junction Temperature (°C)
V
GS
, Gate to Source Voltage (V)
3
Version: B1610
TSM120NA03CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BV
DSS
(Normalized)
Drain-Source Breakdown Voltage
700
1.2
I
D
=1mA
1.1
BV
DSS
vs. Junction Temperature
C, Capacitance (pF)
600
500
400
300
200
CISS
1
COSS
100
0
0
5
10
15
20
25
30
CRSS
0.9
0.8
-75
-50
-25
0
25
50
75
100 125 150
V
DS
, Drain to Source Voltage (V)
Maximum Safe Operating Area, Junction-to-Case
200
100
R
DS(ON)
100
T
J
, Junction Temperature (°C)
Source-Drain Diode Forward Current vs. Voltage
I
S
, Reverse Drain Current (A)
I
D
, Drain Current (A)
10
10
150℃
1
25℃
-55℃
SINGLE PULSE
R
ӨJC
=3.8°C/W
T
C
=25°C
1
0.1
1
10
100
0.1
0.2
0.4
0.6
0.8
1
1.2
V
DS,
Drain to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Normalized Effective Transient
Thermal Impedance, Z
ӨJC
SINGLE PULSE
R
ӨJC
=3.8°C/W
1
0.1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.001
0.01
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC
x R
ӨJC
0.1
0.01
0.0001
t, Square Wave Pulse Duration (sec)
4
Version: B1610
TSM120NA03CR
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
(Unit:
Millimeters)
PDFN56
SUGGESTED PAD LAYOUT
(Unit:
Millimeters)
MARKING DIAGRAM
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
TSC
120NA03
GYWWF
5
Version: B1610
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