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HYB18T1G400C2FL-3.7

Description
DDR DRAM, 256MX4, 0.5ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60
Categorystorage   
File Size4MB,67 Pages
ManufacturerQIMONDA
Environmental Compliance
Download Datasheet Parametric View All

HYB18T1G400C2FL-3.7 Overview

DDR DRAM, 256MX4, 0.5ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60

HYB18T1G400C2FL-3.7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQIMONDA
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
access modeMULTI BANK PAGE BURST
Maximum access time0.5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)266 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
length12.5 mm
memory density1073741824 bit
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals60
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
organize256MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum slew rate0.228 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width8 mm
Base Number Matches1
March 2008
HY[B/I]18T1G400C2[C/F](L)
HY[B/I]18T1G800C2[C/F](L)
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