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MSS39,144-B10B

Description
SILICON, KA BAND, MIXER DIODE, CASE B10B, 2 PIN
Categorydiode   
File Size524KB,4 Pages
ManufacturerCobham Semiconductor Solutions
Environmental Compliance  
Download Datasheet Parametric View All

MSS39,144-B10B Overview

SILICON, KA BAND, MIXER DIODE, CASE B10B, 2 PIN

MSS39,144-B10B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCobham Semiconductor Solutions
package instructionR-XDMW-F2
Contacts2
Manufacturer packaging codeCASE B10B
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresLOW NOISE
ConfigurationSINGLE
Maximum diode capacitance0.08 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandKA BAND
JESD-30 codeR-XDMW-F2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MSS39,000 Series
P-Type Silicon Schottky Diodes
Description
The Aeroflex / Metelics MSS39,000 series of Schottky diodes is
fabricated on P-Type epitaxial substrates for superior 1/f noise
performance in microwave biased-detector applications up to 40
GHz.
Features
Very low 1/f Noise
Detector applications to 40 GHz
Chip, beam lead or packaged devices
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Operation Temperature
Storage Temperature
Power Dissipation
Soldering Temperature (Packaged)
Beam Lead Pull Strength, Min
Rated V
BR
50 mA
-65 ºC to +150 ºC
-65 ºC to +150 ºC
100 mW, derated linearly to zero at T
A
= +150 ºC
+ 230 ºC for 5 sec.
4 grams
Rating
Chip
Electrical Specifications,
T
A
= 25 ºC
Model
MSS39,045-C15
MSS39,048-C15
Test
Conditions
V
BR
MIN
V
F
TYP
C
J
MAX
T
SS
TYP
γ
TYP
Frequency
MAX
Outline
V
V
pF
dBm
mV / mW
GHz
5.0
5.0
I
R
= 10
μA
0.40
0.39
I
F
= 1 mA
0.10
0.15
V
R
= 0 V
F = 1 MHz
-58
-58
DC Bias = 10
μA
R
L
= 100 KΩ
5,000
5,000
F = 10 GHz
Video BW = 2 MHz
18
12
C15
C15
Revision Date: 10/15/2010
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