QED422, QED423 Plastic Infrared Light Emitting Diode
August 2005
QED422, QED423
Plastic Infrared Light Emitting Diode
Features
■
■
■
■
■
■
■
λ
= 880 nm
Chip material = AlGaAs
Package type: Plastic TO-46
Matched Photosensor: QSD722/723/724
Medium Wide Emission Angle, 30°
High Output Power
Package material and color: clear, purple tinted, plastic
Description
The QED422/423 is an 880 nm AlGaAs LED encapsulated in a
clear, purple tinted, plastic TO-46 package.
Package Dimensions
0.190 (4.83)
0.178 (4.52)
REFERENCE
SURFACE
0.220 (5.59)
0.030 (0.76)
NOM
0.800 (20.3)
MIN
0.050 (1.27)
CATHODE
0.100 (2.54)
NOM
Ø 0.215 (5.46)
NOM
45°
0.020 (0.51)
SQ. (2X)
R 0.022 (0.56)
Schematic
ANODE
CATHODE
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal
dimensions unless otherwise specified.
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
QED422, QED423 Rev. 1.0.0
QED422, QED423 Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Power
Dissipation
(1)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Rating
-40 to + 100
-40 to + 100
240 for 5 sec
260 for 10 sec
100
5
200
Unit
°C
°C
°C
°C
mA
V
mW
Notes:
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing
Electrical/Optical Characteristics
(T
A
=25°C)
Parameter
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity QEC422
Radiant Intensity QEC423
Rise Time
Fall Time
Test Conditions
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA, tp = 20 ms
V
R
= 5 V
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA
Symbol
λ
PE
2
Θ
1/2
V
F
I
R
I
E
I
E
t
r
t
f
Min
—
—
—
—
10
20
—
—
Typ
880
30
—
—
—
—
800
800
Max
—
—
1.8
10
40
—
—
—
Units
nm
Deg.
V
µA
mW/sr
mW/sr
ns
ns
2
QED422, QED423 Rev. 1.0.0
www.fairchildsemi.com
QED422, QED423 Plastic Infrared Light Emitting Diode
Fig. 1 Normalized Radiant Intensity vs. Forward Current
I
e
- NORMALIZED RADIANT INTENSITY
10
Normalized to:
I
F
= 100 mA Pulsed
t
pw
= 100
µs
Duty Cycle = 0.1 %
T
A
= 25°C
2.0
Fig. 2 Forward Voltage vs. Ambient Temperature
I
F
= 50 mA
V
F
- FORWARD VOLTAGE (V)
I
F
= 100 mA
1.5
1
0.1
1.0
I
F
= 20 mA
I
F
= 10 mA
0.01
0.5
Normalized to:
I
F
Pulsed
t
pw
= 100
µs
Duty Cycle = 0.1 %
-20
0
20
40
60
80
100
0.001
1
10
100
1000
0.0
-40
I
F
- FORWARD CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (°C)
Fig. 3 Normalized Radiant Intensity vs. Wavelength
1.0
Fig. 4 Radiation Diagram
110
120
130
140
100
90
80
70
60
50
40
30
20
10
0
1.0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
1.0
NORMALIZED RADIANT INTENSITY
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
180
775
800
825
850
875
900
925
950
150
160
170
λ(nm)
3
QED422, QED423 Rev. 1.0.0
www.fairchildsemi.com
QED422, QED423 Plastic Infrared Light Emitting Diode
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
4
QED422, QED423 Rev. 1.0.0
www.fairchildsemi.com
ADI Reference Circuit
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