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BUZ45

Description
Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
CategoryThe transistor   
File Size196KB，5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BUZ45 Overview

Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

BUZ45 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)9.6 A
Maximum drain current (ID)9.6 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)170 pF
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment125 W
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)38 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)570 ns
Maximum opening time (tons)195 ns
Base Number Matches1

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BUZ45 Related Products

BUZ45 BUZ45B BUZ45A BUZ84A BUZ53A BUZ84 BUZ36 BUZ16 BUZ54 BUZ54A
Description Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Power Field-Effect Transistor, 10A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Power Field-Effect Transistor, 8.3A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Power Field-Effect Transistor, 2.6A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Power Field-Effect Transistor, 5.3A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Power Field-Effect Transistor, 48A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Power Field-Effect Transistor, 4.5A I(D), 1000V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 500 V 500 V 500 V 800 V 1000 V 800 V 200 V 50 V 1000 V 1000 V
Maximum drain current (Abs) (ID) 9.6 A 10 A 8.3 A 6 A 2.6 A 5.3 A 22 A 60 A 5.1 A 4.5 A
Maximum drain current (ID) 9.6 A 10 A 8.3 A 6 A 2.6 A 5.3 A 22 A 48 A 5.1 A 4.5 A
Maximum drain-source on-resistance 0.6 Ω 0.5 Ω 0.8 Ω 1.5 Ω 5 Ω 2 Ω 0.12 Ω 0.018 Ω 2 Ω 2.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 170 pF 170 pF 170 pF 140 pF 55 pF 140 pF 200 pF 750 pF 40 pF 40 pF
JEDEC-95 code TO-204AA TO-204AA TO-204AA TO-204AA TO-204AA TO-204AA TO-204AE TO-204AA TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material METAL METAL METAL METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 125 W 125 W 125 W 125 W 75 W 125 W 125 W 125 W 125 W 125 W
Maximum power dissipation(Abs) 125 W 125 W 125 W 125 W 75 W 125 W 125 W 125 W 125 W 125 W
Maximum pulsed drain current (IDM) 38 A 40 A 33 A 24 A 10 A 21 A 88 A 192 A 20 A 18 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 570 ns 570 ns 570 ns 570 ns 220 ns 570 ns 440 ns 890 ns 690 ns 690 ns
Maximum opening time (tons) 195 ns 195 ns 195 ns 230 ns 105 ns 230 ns 155 ns 290 ns 205 ns 205 ns
Maker SIEMENS SIEMENS SIEMENS - SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS

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