DFB54
DFB54
Fast Recovery Diode
Replaces March 1998 version, DS4219-2.4
DS4219-3.0 January 2000
APPLICATIONS
s
Power Supplies
s
Freewheel Diode
s
Battery Chargers
s
D.C. Motor Control
s
Welding
s
Rectification
KEY PARAMETERS
V
RRM
3500V
I
F(AV)
2135A
I
FSM
20000A
Q
r
1500
µ
C
t
rr
6.5
µ
s
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Conditions
DFB54 35
3500
DFB54 34
3400
DFB54 33
3300
DFB54 32
3200
DFB54 31
3100
DFB54 30
3000
Lower voltage grades available.
V
RSM
= V
RRM
+ 100V
Outline type code: DO200AD.
See Package Details for further information.
CURRENT RATINGS
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
2135
3350
3060
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
1320
2080
1810
A
A
A
1/7
DFB54
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
20.0
Units
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 150 C
I t for fusing
2
o
2
o
2000 x 10
3
16
1280 x 10
3
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 44kN
with mounting compound
Forward (conducting)
Double side
Single side
-
-
-
-
-55
39.6
0.027
0.003
0.006
150
150
48.4
o
Min.
dc
Anode dc
-
-
Max.
0.013
0.025
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
R
th(c-h)
Thermal resistance - case to heatsink
o
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
C
C
o
kN
CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage
At T
vj
= 150
o
C
At T
vj
= 150
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
I
F
= 1000A, di
RR
/dt = 100A/µs
T
case
= 150
o
C, V
R
= 100V
Parameter
Conditions
At 1500A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
Typ.
-
-
-
-
-
-
-
-
-
Max.
1.7
100
6.5
1500
450
-
1.15
0.32
-
Units
V
mA
µs
µC
A
-
V
mΩ
V
2/7
DFB54
DEFINITION OF K FACTOR AND Q
RA1
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
dI
R
/dt
0.5x I
RR
I
RR
t
1
t
2
k = t
1
/t
2
τ
CURVES
5000
Measured under pulse conditions
4000
Instantaneous forward current I
F
- (A)
3000
2000
T
j
= 150˚C
1000
T
j
= 25˚C
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage V
F
- (V)
Fig.1 Maximum (limit) forward characteristics
3/7
DFB54
500
Measured under
pulse conditions
400
Instantaneous forward current I
F
- (A)
300
T
j
= 150˚C
T
j
= 25˚C
200
100
0
0.8
1.0
1.2
1.4
1.6
Instantaneous forward voltage V
F
- (V)
Fig.2 Maximum (limit) forward characteristics
100000
I
F
Q
S
=
∫
50µs
0
Conditions:
T
j
= 150˚C,
QS
V
R
= 100V
Reverse recovered charge Q
S
- (µC)
t
p
= 1ms
dI
R
/dt
10000
I
RR
A
B
C
D
1000
E
A: I
F
= 4000A
B: I
F
= 2000A
C: I
F
= 1000A
D: I
F
= 500A
E: I
F
= 200A
100
1
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
Fig.3 Recovered charge
1000
4/7
DFB54
10000
Conditions:
T
j
= 150˚C,
V
R
= 100V
Reverse recovery current I
RR
- (A)
1000
A
B
C
D
100
E
A: I
F
= 2000A
B: I
F
= 1000A
C: I
F
= 500A
D: I
F
= 200A
10
E: I
F
= 100A
1
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
1000
Fig.4 Typical reverse recovery current vs rate of rise of reverse current
0.1
d.c. Double side Cooled
Thermal impedance - (˚C/W)
0.01
0.001
0.0001
0.001
0.01
0.1
Time - (s)
1
10
100
Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
5/7
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