SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF10031/D
The RF Line
Microwave Long Pulse
Power Transistor
Designed for 960–1215 MHz long or short pulse common base amplifier
applications such as JTIDS and Mode–S transmitters.
•
Guaranteed Performance @ 960 MHz, 36 Vdc
Output Power = 30 Watts Peak
Minimum Gain = 9.0 dB Min (9.5 dB Typ)
•
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•
Hermetically Sealed Industry Standard Package
•
Silicon Nitride Passivated
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•
Internal Input Matching for Broadband Operation
MRF10031
30 W (PEAK)
960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376B–02, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage (1)
Emitter–Base Voltage
Collector Current — Continuous (1)
Total Device Dissipation @ T
C
= 25°C (1), (2)
Derate above 25°C
Storage Temperature Range
Junction Temperature
Symbol
V
CES
V
CBO
V
EBO
I
C
P
D
T
stg
T
J
Value
55
55
3.5
3.0
110
0.625
– 65 to + 200
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
θJC
Max
1.6
Unit
°C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case
θ
JC
value
measured @ 23% duty cycle)
REV 6
1
MRF10031
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= 25 mAdc, V
BE
= 0)
Collector–Base Breakdown Voltage (I
C
= 25 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage (I
E
= 5.0 mAdc, I
C
= 0)
Collector Cutoff Current (V
CB
= 36 Vdc, I
E
= 0)
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
55
55
3.5
—
—
—
—
—
—
—
—
2.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (I
C
= 500 mAdc, V
CE
= 5.0 Vdc)
h
FE
20
—
—
—
FUNCTIONAL TESTS
(10
µs
Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle – 25%)
Common–Base Amplifier Power Gain
(V
CC
= 36 Vdc, P
out
= 30 W Peak, f = 960 MHz)
Collector Efficiency
(V
CC
= 36 Vdc, P
out
= 30 W Peak, f = 960 MHz)
Load Mismatch
(V
CC
= 36 Vdc, P
out
= 30 W Peak, f = 960 MHz,
VSWR = 10:1 All Phase Angles)
G
PB
η
ψ
9.0
40
9.5
45
—
—
dB
%
No Degradation in Output Power
Z5
RF INPUT
Z1
Z2
Z3
Z4
D.U.T.
L1
C2
C3
C4
+
+
36 Vdc
-
RF OUTPUT
Z6
Z7
Z8
Z9
C1
C1 — 75 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1
µF
C4 — 1000
µF,
50 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
ε
r
= 2.55, 2 Oz. Copper
BROADBAND FIXTURE
.628
.223
.118
1.350
1.020
.218
2.138
.215
.354
.389
.113
2.050
.100
.083
.083
.780
.733
.669
.083
1.210
.128
.400
Figure 1. Test Circuit
REV 6
2
100
90
POUT, OUTPUT POWER (WATTS)
80
70
60
50
40
30
20
10
1
2
3
4
5
6
7
P
IN
, INPUT POWER (WATTS)
8
9
10
f = 960 MHz
1090
1215
V
CC
= 36 VOLTS
Figure 2. Output Power versus Input Power
1025
f = 960 MHz
Z
in
1220
Z
o
= 10
Ω
1220
1090
1155
1025
f = 960 MHz
P
out
= 30 W Pk V
CC
= 36 V
f
MHz
960
1025
1090
1155
1220
Zin
Ohms
2.05 + j5.24
2.67 + j6.34
24.0
+ j7.14
25.5
+ j6.24
25.7
+ j4.34
Z
OL
*
Ohms
22.9
- j2.35
2.55 - j1.35
2.52 - j0.95
22.6
- j0.65
22.8
- j0.35
Z
OL
*
1090
1155
Z
OL
* = Conjugate of the optimum load
impedance into which the device operates at
a given output power, voltage, and frequency.
Figure 3. Series Equivalent Input/Output Impedances
REV 6
3
PACKAGE DIMENSIONS
G
Q
2 PL
0.25 (0.010)
R
K
D
2 PL
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
K
N
Q
R
INCHES
MIN
MAX
0.890
0.910
0.370
0.400
0.145
0.160
0.140
0.160
0.055
0.065
0.003
0.006
0.650 BSC
0.110
0.130
0.180
0.220
0.390
0.410
0.115
0.135
0.390
0.140
MILLIMETERS
MIN
MAX
22.61
23.11
9.40
10.16
3.69
4.06
3.56
4.06
1.40
1.65
0.08
0.15
16.51 BSC
2.80
3.30
4.57
5.59
9.91
10.41
2.93
3.42
9.91
10.41
–B–
0.25 (0.010)
M
T A
M
B
M
H
E
N
F
2 PL
0.25 (0.010)
–T–
M
T A
M
B
M
–A–
C
SEATING
PLANE
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
CASE 376B–02
ISSUE B
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 6
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