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1N5820

Description
RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size166KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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1N5820 Overview

RECTIFIER DIODE

1N5820 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeRECTIFIER DIODE
CE
CHENYI ELECTRONICS
1N5820 THRU 1N5822
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 40 Volts
Forward Current - 3.0Ampere
FEATURES
. Plastic package has Underwriters Laboratory Flammability Classification 94V-0
. Metal sliicon junction ,majority carriet conduction
. Guard ring for overcoltage protection
. Low power loss,high efficiency
. High current capability ,Low forward voltage drop
. High surge capability
. For use in low voltage ,high frequency inverters,
free wheeling , and polarilty protection applications
. High temperature soldering guaranteed: 250 /10 seconds at terminals,
0.375"(9.5mm)lead length,5lbs.(2.3kg)tension
MECHANICAL DATA
.
Case:
JEDEC DO-201AD molded plastic body
.
Terminals:
Solder plated,solderable per MIL-STD-750,method 2026
.
Polarity:
coler band denotes cathode end
.
Mounting Position:
Any
.
Weight:
0.0041 ounce, 1.15 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified,Single phase,half wave,resistive or inductive)
load. For capacitive load,derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
Macimum average forward rectified
current 0.375"(9.5mm)lead length at TL=90
Peak forward surge current 8.3ms singel half
sine-wave superimposed on rated load
(JEDEC method) at TL=75 )
Maximum instantaneous forward voltage at 1.0 A(Note 1)
Maximum instantaneous forward voltage at 3.1 A(Note 1)
Maximum instantaneous reverse
current at rated DC blocking voltage(Note 1)
Typeical thermal resistance(Note 2)
Operating junction and storage temperature range
TA=25
TA=100
V
F
V
F
I
R
I
FSM
V
RRM
V
RMS
V
DC
V
RSM
I
(AV)
1N5820
20
14
20
24
1N5821
30
21
30
36
3.0
1N5822
40
28
40
48
Units
Volts
Volts
Volts
Volts
Amp
80.0
Amps
0.475
0.850
0.500
0.900
1.5
0.525
0.950
Volts
Volts
mA
20.0
R
R
JA
JL
40.0
/W
10.0
-65 to +125
T
J/
T
STG
Notes:
1. Pulse test: 300
s
pulse width,1% duty cycle
2.Thermal resistance (from junction to ambient)Vertical P.C.B. Mounted,0.500"(12.7mm)lead
length with 2.5X2.5(63.5X63.5mm)copper pads
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2

1N5820 Related Products

1N5820 1N5820THRU1N5822 1N5821 1N5822
Description RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE, DO-201AD 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201
state ACTIVE ACTIVE - ACTIVE
Diode type RECTIFIER DIODE RECTIFIER DIODE - rectifier diode
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