1N5822 datasheet, PDF - EEWORLD Datasheet

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1N5822: Description3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201; Categorysemiconductor Discrete semiconductor; File Size166KB，2 Pages; ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.

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1N5822 Overview

3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201

1N5822 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	ROHS COMPLIANT, PLASTIC PACKAGE-2
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	rectifier diode
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	40 V
Maximum average forward current	3 A
Maximum non-repetitive peak forward current	150 A

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CHENYI ELECTRONICS

1N5820 THRU 1N5822

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts

Forward Current - 3.0Ampere

FEATURES

. Plastic package has Underwriters Laboratory Flammability Classification 94V-0

. Metal sliicon junction ,majority carriet conduction

. Guard ring for overcoltage protection

. Low power loss,high efficiency

. High current capability ,Low forward voltage drop

. High surge capability

. For use in low voltage ,high frequency inverters,

free wheeling , and polarilty protection applications

. High temperature soldering guaranteed: 250 /10 seconds at terminals,

0.375"(9.5mm)lead length,5lbs.(2.3kg)tension

MECHANICAL DATA

Case:

JEDEC DO-201AD molded plastic body

Terminals:

Solder plated,solderable per MIL-STD-750,method 2026

Polarity:

coler band denotes cathode end

Mounting Position:

Any

Weight:

0.0041 ounce, 1.15 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Ratings at 25

ambient temperature unless otherwise specified,Single phase,half wave,resistive or inductive)

load. For capacitive load,derate by 20%)

Symbols

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum non-repetitive peak reverse voltage

Macimum average forward rectified

current 0.375"(9.5mm)lead length at TL=90

Peak forward surge current 8.3ms singel half

sine-wave superimposed on rated load

(JEDEC method) at TL=75 )

Maximum instantaneous forward voltage at 1.0 A(Note 1)

Maximum instantaneous forward voltage at 3.1 A(Note 1)

Maximum instantaneous reverse

current at rated DC blocking voltage(Note 1)

Typeical thermal resistance(Note 2)

Operating junction and storage temperature range

TA=25

TA=100

FSM

RRM

RMS

RSM

(AV)

1N5820

1N5821

3.0

1N5822

Units

Volts

Amp

80.0

Amps

0.475

0.850

0.500

0.900

1.5

0.525

0.950

Volts

20.0

40.0

10.0

-65 to +125

STG

Notes:

1. Pulse test: 300

pulse width,1% duty cycle

2.Thermal resistance (from junction to ambient)Vertical P.C.B. Mounted,0.500"(12.7mm)lead

length with 2.5X2.5(63.5X63.5mm)copper pads

Page 1 of 2

1N5822 Related Products

	1N5822	1N5820	1N5820THRU1N5822	1N5821
Description	3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE, DO-201AD
state	ACTIVE	ACTIVE	ACTIVE	-
Diode type	rectifier diode	RECTIFIER DIODE	RECTIFIER DIODE	-

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