IRGMC30UUPBF datasheet, PDF - EEWORLD Datasheet

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IRGMC30UUPBF: DescriptionInsulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA; CategoryThe transistor; File Size202KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA

IRGMC30UUPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code	compliant
Is Samacsys	N
Other features	ULTRA FAST
Shell connection	ISOLATED
Maximum collector current (IC)	17 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	5.5 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-254AA
JESD-30 code	S-XSFM-P3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	75 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
VCEsat-Max	3 V
Base Number Matches	1

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IRGMC30UUPBF Related Products

	IRGMC30UUPBF	IRGMC30UDPBF	IRGMC30UU	IRGMC30UD
Description	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA
Is it lead-free?	Lead free	Lead free	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code	compliant	compliant	compliant	compliant
Is Samacsys	N	N	N	N
Other features	ULTRA FAST	ULTRA FAST	ULTRA FAST	ULTRA FAST
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	17 A	17 A	17 A	17 A
Collector-emitter maximum voltage	600 V	600 V	600 V	600 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Gate emitter threshold voltage maximum	5.5 V	5.5 V	5.5 V	5.5 V
Gate-emitter maximum voltage	20 V	20 V	20 V	20 V
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	S-XSFM-P3	S-XSFM-P3	S-XSFM-P3	S-XSFM-P3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	75 W	75 W	75 W	75 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
VCEsat-Max	3 V	3 V	3 V	3 V
Base Number Matches	1	1	1	1

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