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IRGMC30UD

Description
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA
CategoryThe transistor   
File Size202KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRGMC30UD Overview

Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA

IRGMC30UD Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, S-XSFM-P3
Reach Compliance Codecompliant
Is SamacsysN
Other featuresULTRA FAST
Shell connectionISOLATED
Maximum collector current (IC)17 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-254AA
JESD-30 codeS-XSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment75 W
Maximum power dissipation(Abs)75 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
VCEsat-Max3 V
Base Number Matches1

IRGMC30UD Related Products

IRGMC30UD IRGMC30UDPBF IRGMC30UUPBF IRGMC30UU
Description Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-254AA
Is it lead-free? Contains lead Lead free Lead free Contains lead
Is it Rohs certified? incompatible conform to conform to incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction FLANGE MOUNT, S-XSFM-P3 FLANGE MOUNT, S-XSFM-P3 FLANGE MOUNT, S-XSFM-P3 FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code compliant compliant compliant compliant
Is Samacsys N N N N
Other features ULTRA FAST ULTRA FAST ULTRA FAST ULTRA FAST
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 17 A 17 A 17 A 17 A
Collector-emitter maximum voltage 600 V 600 V 600 V 600 V
Configuration SINGLE SINGLE SINGLE SINGLE
Gate emitter threshold voltage maximum 5.5 V 5.5 V 5.5 V 5.5 V
Gate-emitter maximum voltage 20 V 20 V 20 V 20 V
JEDEC-95 code TO-254AA TO-254AA TO-254AA TO-254AA
JESD-30 code S-XSFM-P3 S-XSFM-P3 S-XSFM-P3 S-XSFM-P3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 75 W 75 W 75 W 75 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 40 40 NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON
VCEsat-Max 3 V 3 V 3 V 3 V
Base Number Matches 1 1 1 1
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