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1N5821

Description
RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size13KB,1 Pages
ManufacturerSSE
Websitehttp://www.sse-diode.com/
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1N5821 Overview

RECTIFIER DIODE, DO-201AD

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
1N5820 THRU 1N5822
SCHOTTKY BARRIER
RECTIFIER
VOLTAGE: 20 TO 40V CURRENT: 3.0A
FEATURES
• Epitaxial construction for chip
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed:
250
o
C/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
TECHNICAL
SPECIFICATION
DO - 201AD
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
1N5820
1N5821
1N5822
UNITS
V
V
V
A
A
V
mA
mA
pF
o
20
30
40
V
RRM
Maximum Repetitive Peak Reverse Voltage
14
21
28
V
RMS
Maximum RMS Voltage
20
30
40
V
DC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
I
F(AV)
3.0
(9.5mm lead length, at T
L
=95
o
C)
Peak Forward Surge Current (8.3ms single
I
FSM
80
half sine-wave superimposed on rated load)
0.475
0.5
0.525
V
F
Maximum Forward Voltage (at 3.0A DC)
2.0
Maximum DC Reverse Current
T
a
=25
o
C
I
R
10.0
(at rated DC blocking voltage)
T
a
=100
o
C
250
C
J
Typical Junction Capacitance
(Note 1)
40
R
θ
(ja)
Typical Thermal Resistance
(Note 2)
-65 to +125
T
STG
,T
J
Storage and Operation Junction Temperature
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0V
dc
2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, vertical P.C. board mounted
C/W
o
C
http://www.sse-diode.com

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