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2SC2712-GR

Description
Rated power: 150mW Collector current Ic: 150mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN
CategoryDiscrete semiconductor    triode   
File Size911KB,6 Pages
ManufacturerFoshan Blue Rocket Electronics Co.,Ltd.
Websitehttp://www.fsbrec.com/
Foshan Blue Arrow Electronics Co., Ltd. is a high-tech enterprise in Guangdong Province and a professional R&D manufacturer of semiconductor devices in China. The company was formerly Foshan Radio Factory No. 4, which was founded in the early 1970s. It was transformed into a limited liability company in 1998 and changed its shares to Foshan Blue Arrow Electronics Co., Ltd. in 2012. At present, it has formed an annual production scale of 10 billion units and is one of the main semiconductor device production bases in South China. The company's factory is located in Chancheng District, Foshan City, with a plant area of ​​45,000 square meters. The company has a large number of advanced production lines, and its product series include various packaged bipolar transistors, field effect transistors (MOSFET), various switches, voltage regulators, Schottky (SBD), fast recovery (FRD) and other diodes, thyristors (silicon controlled rectifiers), integrated circuits (ICs), LEDs and LED lighting fixtures, etc. The products are widely used in household appliances, power supplies, IT digital, communications, new energy, automotive electronics, instrumentation, display screens, lighting, backlight sources and other fields. The company has passed ISO9001 quality management system certification since 1997, ISO14001 environmental management system certification in 2005, ISO/TS16949 (IATF16949) automotive industry quality management system standard certification in 2013, and OHSAS18001 certification in 2015. At present, the company has established the Guangdong Semiconductor Device Engineering Technology Research and Development Center and the Guangdong Enterprise Technology Center. In 2008, the "Blue Arrow" brand transistor was recognized as a famous brand product in Guangdong Province.
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2SC2712-GR Overview

Rated power: 150mW Collector current Ic: 150mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN

2SC2712-GR Parametric

Parameter NameAttribute value
rated power150mW
Collector current Ic150mA
Collector-emitter breakdown voltage Vce50V
Transistor typeNPN

2SC2712-GR Preview

Download Datasheet
2SC2712
Rev.F Apr.-2017
DATA SHEET
描述
/
Descriptions
SOT-23 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a SOT-23 Plastic Package.
特征
/ Features
电压,电流,放大高,噪声½,放大线性½。
High voltage, high current, high h
FE
, low noise, excellent h
FE
linearity.
用途
/
Applications
用于普通音频放大。
Audio frequency general purpose amplifier applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/
3
Pinning
1
2
PIN1:Base
放大及印章代码
PIN 2:Emitter
PIN 3:Collector
/ h
FE
Classifications & Marking
O
70½140
HLO
Y
120½240
HLY
GR
200½400
HLG
BL
350½700
HLL
h
FE
Classifications
Symbol
h
FE
Range
Marking
http://www.fsbrec.com
1
/
6
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