DTA144TUAFRAT106 datasheet, PDF

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DTA144TUAFRAT106: DescriptionSmall Signal Bipolar Transistor,; CategoryThe transistor; File Size2MB，10 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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DTA144TUAFRAT106 Overview

Small Signal Bipolar Transistor,

DTA144TUAFRAT106 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	SC-70, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Guideline	AEC-Q101
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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DTA144T series

PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

Datasheet

AEC-Q101 Qualified

Outline

Parameter

CEO

Value

-50V

-100mA

47kΩ

VMT3

EMT3

DTA144TMFHA

DTA144TM

(SC-105AA)

Features

1) Built-In Biasing Resistor

2) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit) .

3) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

completely eliminating parasitic effects.

4) Only the on/off conditions need to be set

for operation, making the circuit design easy.

5) Complementary NPN Types: DTC144T series

6) Lead Free/RoHS Compliant.

Driver circuit

Application

Switching circuit, Inverter circuit, Interface circuit,

Packaging specifications

Part No.

ew om

es en

ig de

ns d

UMT3

SMT3

DTA144TUA

DTA144TUAFRA

SOT-323(SC-70)

Inner circuit

B: BASE

C: COLLECTOR

E: EMITTER

Package

VMT3

EMT3

UMT3

SMT3

Package

size

1212

1616

2021

2928

Taping

code

T2L

T106

T146

Reel size Tape width

(mm)

180

DTA144TMFHA

DTA144TM

DTA144TEFRA

DTA144TE

DTA144TUAFRA

DTA144TUA

DTA144TKAFRA

DTA144TKA

www.rohm.com

1/7

DTA144TEFRA

DTA144TE

SOT-416(SC-75A)

DTA144TKA

DTA144TKAFRA

SOT-346(SC-59)

Basic

ordering

unit.(pcs)

8000

3000

Marking

20121023 - Rev.001

DTA144TUAFRAT106 Related Products

	DTA144TUAFRAT106	DTA144TEFRATL	DTA144TKAFRAT146	DTA144TMFHAT2L
Description	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
Maker	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor
package instruction	SC-70, 3 PIN	SMALL OUTLINE, R-PDSO-G3	SC-59,3 PIN	SC-105AA, 3 PIN
Reach Compliance Code	compliant	compliant	unknown	unknown
Other features	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	100	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-F3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Guideline	AEC-Q101	AEC-Q101	AEC-Q101	AEC-Q101
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz

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