BSS138DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
50V
R
DS(ON)
max
3.5Ω @ V
GS
= 10V
I
D
max
T
A
= +25°C
200mA
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Applications
Load Switch
SOT-363
D
2
G
1
S
1
S
2
G
2
D
1
TOP VIEW
TOP VIEW
Internal Schematic
Ordering Information
Part Number
BSS138DW-7-F
Notes:
(Note 4)
Case
SOT-363
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K38
YM
Date Code Key
Year
Code
Month
Code
2005
S
Jan
1
YM
K38
2006
T
Feb
2
2007
U
K38
YM
2008
V
Mar
3
YM
K38
2009
W
Apr
4
2010
X
May
5
K38 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2011
Y
Jun
6
2012
Z
2013
A
Jul
7
2014
B
Aug
8
2015
C
Sep
9
2016
D
Oct
O
2017
E
2018
F
Nov
N
2019
G
Dec
D
BSS138DW
Document number: DS30203 Rev. 13 - 2
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January 2014
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BSS138DW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 7)
Gate-Source Voltage
Drain Current (Note 5)
Symbol
V
DSS
V
DGR
V
GSS
I
D
BSS138DW
50
50
20
200
Units
V
V
V
mA
Continuous
Continuous
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
, T
STG
BSS138DW
200
625
-55 to +150
Units
mW
C/W
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
5.
6.
7.
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
50
0.5
100
Typ
75
1.2
1.4
Max
0.5
100
1.5
3.5
50
25
8.0
20
20
Unit
V
µA
nA
V
Ω
mS
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 50V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 0.22A
V
DS
=25V, I
D
= 0.2A, f = 1.0KHz
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50Ω
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
R
GS
20K.
BSS138DW
Document number: DS30203 Rev. 13 - 2
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January 2014
© Diodes Incorporated
BSS138DW
0.6
I
D
, DRAIN-SOURCE CURRENT (A)
0.5
T
j
= 25
°
C
V
GS
= 3.5V
0.8
0.7
V
DS
= 1V
-55
°
C
V
GS
= 3.25V
I
D
, DRAIN-SOURCE CURRENT (A)
0.6
0.5
25
°
C
0.4
V
GS
= 3.0V
150
°
C
0.3
V
GS
= 2.75V
0.4
0.3
0.2
0.1
0
0
0.2
V
GS
= 2.5V
0.1
0
7
3
4
5
6
8
9 10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0
1
2
0.5 1
1.5
2
2.5
3 3.5 4
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
4.5
2.45
2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, NORMALIZED DRAIN-SOURCE
ON-RESISTANCE (
)
2.25
2.05
1.85
1.65
1.45
1.25
1.05
0.85
0.65
-55
45
145
95
-5
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
V
GS
= 4.5V
I
D
= 0.075A
V
GS
= 10V
I
D
= 0.5A
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
25
50
75
100 125 150
-25
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
9
8
7
150
°
C
V
GS
= 2.75V
0
-55
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
8
V
GS
= 2.5V
150
°
C
7
6
5
4
3
-55
°
C
25
°
C
6
5
4
25
°
C
3
2
1
0
0
0.05
-55
°
C
2
1
0
0
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16
I
D
, DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
0.2
0.25
0.1
0.15
I
D
, DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
BSS138DW
Document number: DS30203 Rev. 13 - 2
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January 2014
© Diodes Incorporated
BSS138DW
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
6
V
GS
= 4.5V
3.5
V
GS
= 10V
150
°
C
5
150
°
C
3
2.5
2
25
°
C
4
3
25
°
C
1.5
1
-55
°
C
2
1
0
0
-55
°
C
0.5
0
0
0.5
I
D
, DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
0.5
I
D
, DRAIN-CURRENT (A)
Fig. 8 Drain-Source On-Resistance vs. Drain-Current
1
100
V
GS
= 0V
f = 1MHz
I
D
, DIODE CURRENT (A)
0.1
150
°
C
-55
°
C
C, CAPACITANCE (pF)
C
iss
10
C
oss
0.01
25
°
C
C
rss
0.001
0
0.2
0.6
1
1.2
0.4
0.8
V
SD
, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
1
0
5
15
20
25
10
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain-Source Voltage
BSS138DW
Document number: DS30203 Rev. 13 - 2
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January 2014
© Diodes Incorporated
BSS138DW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
M
J
D
F
L
SOT363
Dim Min Max Typ
A
0.10 0.30 0.25
B
1.15 1.35 1.30
C
2.00 2.20 2.10
D
0.65 Typ
F
0.40 0.45 0.425
H
1.80 2.20 2.15
J
0
0.10 0.05
K
0.90 1.00 1.00
L
0.25 0.40 0.30
M
0.10 0.22 0.11
0°
8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
Z
G
C1
Y
X
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
BSS138DW
Document number: DS30203 Rev. 13 - 2
5 of 6
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January 2014
© Diodes Incorporated
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