BSN20
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
V
(BR)DSS
50V
R
DS(ON)
1.8 @ V
GS
= 10V
2.0 @ V
GS
= 4.5V
I
D
T
A
= +25°C
500mA
450mA
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This new generation MOSFET has been designed to minimize the on-
NEW PRODUCT
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Applications
Backlighting
DC-DC Converters
Power Management Functions
SOT23
Drain
D
Gate
Source
G
S
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 5)
Part Number
BSN20-7
BSN20Q-7
Notes:
Qualification
Standard
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N20 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or
Y
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
YM
N20
N20
Date Code Key
Year
Code
Month
Code
Chengdu A/T Site
2009
W
Jan
1
Feb
2
Shanghai A/T Site
2010
X
Mar
3
Apr
4
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
BSN20
Document number: DS31898 Rev. 8 - 2
YM
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September 2013
© Diodes Incorporated
BSN20
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
@ T
SP
= +25°C (Note 6)
Steady
State
T
A
= +25°C
T
A
= +100°C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
50
20
500
300
1.2
Units
V
V
mA
A
Pulsed Drain Current @ T
SP
= +25°C (Notes 6 & 7)
NEW PRODUCT
Thermal Characteristics
Characteristic
Power Dissipation, @T
A
= +25°C (Note 6)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6)
Power Dissipation, @T
SP
= +25°C (Note 6)
Thermal Resistance, @T
SP
= +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
JA
P
D
R
JSP
T
J
, T
STG
Value
600
200
920
136
-55 to +150
Units
mW
C/W
mW
°C/W
°C
.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Source (diode forward) Current
Peak Source (diode forward) Current
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
I
S
I
SM
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
50
0.4
40
Typ
1.0
1.3
1.6
320
1.0
21.8
5.6
3.3
49
800
100
100
2.93
2.99
9.45
8.3
Max
0.5
100
1.5
1.8
2.0
1.5
194
1.2
40
15
10
Unit
V
µA
nA
V
mS
V
mA
A
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 50V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 0.22A
V
GS
= 4.5V, I
D
= 0.1A
V
DS
= 10V, I
D
= 0.1A
V
GS
= 0V, I
S
= 180mA
T
SP
= +25°C
T
SP
= +25°C (Notes 3 & 4)
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
V
DS
=0V, V
GS
= 0V, f = 1MHz
V
GS
= 10V, V
DD
= 25V,
I
D
= 250mA
V
DD
= 30V, V
GEN
= 10V,
R
L
= 150, R
GEN
= 50,
I
D
= 0.2A
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
BSN20
Document number: DS31898 Rev. 8 - 2
2 of 6
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September 2013
© Diodes Incorporated
BSN20
P
D
, POWER DISSIPATION (%)
100
I
DER
, NORMALIZED CONTINUOUS CURRENT (%)
120
120
100
80
80
60
60
NEW PRODUCT
40
40
20
20
0
25
50
75
100
125
150
175
T
S
, SOLDER POINT TEMPERATURE (°C)
Fig 1. Normalized Total Power Dissipation
as a Function of Solder Point Temperature
0
0
50
75
100
125
150 175
25
T
S
, SOLDER POINT TEMPERATURE (°C)
Fig 2. Normalized Continuous Current
vs. Solder Point Temperature
1
R
ds(on)
Limited
PW = DC
I
D
, DRAIN CURRENT (A)
0.1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.01
PW = 100µs
PW = 10µs
T
J(MAX)
= 150°C
T
A
= 25°C
Single Pulse
0.001
0.1
1
10
V
DS
, DRAIN-SOURE VOLTAGE (V)
Fig. 3 SOA, Safe Operation Area
100
Z
th(j-sp)
, TRANSIENT THERMAL RESISTANCE (°C/W)
1,000
100
D = 0.5
D = 0.3
D = 0.1
10
D = 0.05
D = 0.02
Duty Cycle, D = t
1
/t
2
D = Single Pulse
1
0.00001
0.0001
0.001
0.01
0.1
t
1
, PULSE DURATION TIME (s)
Fig. 4 Transient Thermal Response
1
10
BSN20
Document number: DS31898 Rev. 8 - 2
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September 2013
© Diodes Incorporated
BSN20
0.8
0.7
I
D
, DRAIN-SOURCE CURRENT (A)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
150
°
C
25
°
C
V
DS
= 5V
0.7
0.6
0.5
0.4
V
GS
= 4.0V
V
GS
= 10V
V
GS
= 4.5V
I
D
, DRAIN-SOURCE CURRENT (A)
0.3
0.2
0.1
0
V
GS
= 3.0V
NEW PRODUCT
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Drain-Source Current vs. Drain-Source Voltage
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 6 Transfer Characteristics
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
9
8
7
6
5
4
3
2
1
0
0
0.1
V
GS
= 3.5V
V
GS
= 4.0V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
10
2.5
2.0
V
GS
= 10V
I
D
= 500mA
1.5
V
GS
= 4.5V
I
D
= 200mA
1.0
0.5
V
GS
= 4.5V
V
GS
= 10V
0.2
0.3
0.4
0.5
0.6 0.7
I
D
, DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 8 Drain-Source On-Resistance vs. Junction Temperature
0.5
0
-50
2.4
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.0
I
D
, DRAIN-SOURCE CURRENT (A)
0.4
1.6
I
D
= 1.0mA
0.3
1.2
0.2
0.8
I
D
= 250µA
0.4
0.1
150
°
C
125
°
C
85
°
C
25
°
C
-55
°
C
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 9 Gate Threshold Voltage vs. Junction Temperature
0
-50
0
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 10 Transfer Characteristics
4
BSN20
Document number: DS31898 Rev. 8 - 2
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September 2013
© Diodes Incorporated
BSN20
0.8
g
fs
, FORWARD TRANSCONDUCTANCE (s)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.1
0.2 0.3 0.4 0.5 0.6 0.7
I
D
, DRAIN-CURRENT (A)
Fig. 11 Typical Transfer Characteristic
0.8
150
°
C
25
°
C
40
35
30
C, CAPACITANCE (pF)
25
20
C
iss
15
10
5
0
0
5
C
oss
C
rss
NEW PRODUCT
10
15
20
25
30
35 40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Capacitance vs. Drain-Source Voltage
1.0
0.9
I
S
, SOURCE CURRENT (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
, DIODE FORWARD VOLTAGE (V)
Fig. 13 Source Current vs. Diode Forward Voltage
150
°
C
25
°
C
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
H
J
K
A ll 7 °
G A U G E P L A N E
0 . 2 5
K 1
a
A
M
L
L 1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
8°
All Dimensions in mm
BSN20
Document number: DS31898 Rev. 8 - 2
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September 2013
© Diodes Incorporated
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