A Product Line of
Diodes Incorporated
DXT2012P5
60V PNP MEDIUM POWER TRANSISTOR
PowerDI
®
5
Features
ADVANCE INFORMATION
•
•
•
•
•
•
•
•
43% smaller than SOT223; 60% smaller than TO252
Maximum height just 1.1mm
Rated up to 3.2W
V
CEO
= 60V
I
C
= -5.5A; I
CM
= 15A
Low Saturation voltage
Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1)
“Green” Device (Note 2)
Mechanical Data
•
•
•
•
•
Case: PowerDI 5
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.093 grams (approximate)
®
Applications
•
•
Motor driver
Regulator circuit
C
B
Top View
Bottom View
Device Schematic
E
Pin-out diagram
Ordering Information
(Note 3)
Part Number
DXT2012P5-13
Notes:
Case
®
PowerDI 5
Packaging
5000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DXT2012
YYWWK
DXT2012 = Product Type Marking Code
= Manufacturers’ Code Marking
K = Factory Designator
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 09 for 2009)
WW = Week code 01 to 53
PowerDI is a registered trademark of Diodes
DXT2012P5
Document number: DS32070 Rev. 2 - 2
1 of 7
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DXT2012P5
Maximum Ratings
ADVANCE INFORMATION
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-100
-60
-7
-5.5
-15
Unit
V
V
V
A
A
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation @ T
A
= 25°C (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4) @T
A
= 25°C
Power Dissipation @ T
A
= 25°C (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5) @T
A
= 25°C
Power Dissipation @ T
A
= 25°C (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 6) @T
A
= 25°C
Thermal Resistance, Junction to Collector Terminal
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
P
D
R
θ
JA
R
θ
JT
T
J
, T
STG
Value
3.2
39
1.7
75
0.74
169
5.6
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C/W
°C
4. Device mounted on FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm.
5. Device mounted on FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm.
6. Device mounted on FR-4 PCB, 2 single sided 1oz. copper, minimum recommended pad layout.
PowerDI is a registered trademark of Diodes
DXT2012P5
Document number: DS32070 Rev. 2 - 2
2 of 7
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DXT2012P5
3.5
Max Power Dissipation (W)
-I
C
Collector Current (A)
V
CE(sat)
10
Limited
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
175
See note 3
See note 4
See note 5
ADVANCE INFORMATION
1
DC
1s
100ms
10ms
1ms
100µs
100m
Single Pulse. T
amb
=25°C
See note 3
10m
100m
1
10
100
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
Single Pulse. T
amb
=25°C
Thermal Resistance (°C/W)
40
30
See note 3
Max Power Dissipation (W)
100
See note 3
D=0.5
20
D=0.2
10
10
0
100µ
D=0.1
Single Pulse
D=0.05
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Thermal Resistance (°C/W)
180
160
140
120
100
80
60
40
20
10
2 oz. weight Copper
1 oz. weight Copper
Pulse Power Dissipation
4
T
(amb)
=25°C
T
(amb)
=25°C
Power Rating (W)
3
2 oz. weight Copper
2
1
1 oz. weight Copper
100
1000
10000
0
10
100
1000
10000
Copper Area (sq mm)
Copper Area (sq mm)
Thermal Resistance vs. Cu Area
Power Rating vs. Cu Area
PowerDI is a registered trademark of Diodes
DXT2012P5
Document number: DS32070 Rev. 2 - 2
3 of 7
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DXT2012P5
Electrical Characteristics
ADVANCE INFORMATION
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
R≤1kΩ
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Min
-100
-60
-7
−
−
−
−
−
−
−
−
−
100
100
45
10
−
−
−
−
Typ
-120
-80
-8.1
<1
−
<1
−
<1
-15
-55
-90
-195
-1030
-920
250
200
90
25
120
48
39
370
Max
−
−
−
-20
-0.5
-20
-0.5
-10
-25
-70
-120
-250
-1150
-1020
−
300
−
−
−
−
−
−
Unit
V
V
V
nA
μA
nA
μA
nA
mV
mV
mV
−
Test Condition
I
C
= -100μA
I
C
= -10mA
I
E
= -100μA
V
CB
= -80V
V
CB
= -80V, T
amb
= 100 °C
V
CB
= -80V
V
CB
= -80V, T
amb
= 100 °C
V
EB
= -6V
I
C
= -0.1A, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -5A, I
B
= -500mA
I
C
= -5A, I
B
= -500mA
V
CE
= -1V, I
C
= -5A
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -2A
V
CE
= -1V, I
C
= -5A
V
CE
= -1V, I
C
= -10A
V
CE
= -10V, I
C
= -100mA,
f = 50MHz
V
CB
= -10V, f = 1MHz
V
CC
= 10V, I
C
= 1A,
I
B1
= I
B2
= -100mA
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
DC Current Gain (Note 7)
Transition Frequency
Output Capacitance
Switching Times
Notes:
7. Pulse Test: Pulse width
≤300μs.
Duty cycle
≤2.0%.
f
T
C
obo
t
on
t
off
MHz
pF
ns
PowerDI is a registered trademark of Diodes
DXT2012P5
Document number: DS32070 Rev. 2 - 2
4 of 7
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DXT2012P5
Typical Characteristic
ADVANCE INFORMATION
1
Tamb= C
25°
0.5
I
C
/I
B
=
10
0.4
- V
CE(SAT)
(V)
- V
CE(SAT)
(V)
I
C
/I
B
=
50
I
C
/I
B
=
20
100m
0.3
0.2
0.1
0.0
1m
-55°
C
100°
C
25°
C
I
C
/I
B
=
10
10m
1m
10m
100m
1
10
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
- I
C
Collector Current (A)
10m
100m
1
10
V
CE(SAT)
v I
C
1.4
1.2
100°
C
V
CE
=
1V
300
250
1.4
I
C
/I
B
=
10
- V
BE(SAT)
(V)
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55°
C
25°
C
200
150
100
50
0
Typical Gain (h
FE
)
1.2
1.0
0.8
0.6
0.4
1m
10m
25°
C
Normalised Gain
-55°
C
100°
C
- I
C
Collector Current (A)
h
FE
v I
C
- I
C
Collector Current (A)
100m
1
10
V
BE(SAT)
v I
C
1.4
V
CE
=
1V
1.2
-55°
C
- V
BE(ON)
(V)
1.0
25°
C
0.8
0.6
0.4
1m
10m
100m
100°
C
- I
C
Collector Current (A)
1
10
V
BE(ON)
v I
C
PowerDI is a registered trademark of Diodes
DXT2012P5
Document number: DS32070 Rev. 2 - 2
5 of 7
www.diodes.com
March 2010
© Diodes Incorporated
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