ZXTP25040DFH
40V SOT23 PNP medium power transistor
Summary
BV
CEO
> -40V
BV
ECO
> -3V ;
I
C(CONT)
= -3A
R
CE(sat)
= 55 m
P
D
= 1.25W
Complementary part number ZXTN25040DFH
;
V
CE(sat)
< -85mV @ 1A ;
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
C
B
Features
•
•
•
•
High power dissipation SOT23 package
High peak current
Low saturation voltage
3V reverse blocking voltage
E
Applications
•
•
•
•
MOSFET and IGBT gate driving
DC - DC converters
Motor drive
High side driver
E
C
B
Pinout - top view
Tape width
8mm
Quantity per reel
3000
Ordering information
Device
ZXTP25040DFHTA
Reel size
(inches)
7
Device marking
024
Issue 5 - March 2008
© Zetex Semiconductors plc 2008
1
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ZXTP25040DFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current
(b)
Peak pulse current
Power dissipation at T
A
=25°C
(a)
linear derating factor
Power dissipation at T
A
=25°C
(b)
linear derating factor
Power dissipation at T
A
=25°C
(c)
linear derating factor
Power dissipation at T
A
=25°C
(d)
linear derating factor
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
CM
P
D
Limit
-45
-40
-3
-7
-3
-9
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
-55 to 150
Unit
V
V
V
V
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
P
D
P
D
P
D
T
j
, T
stg
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
R
JA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5sec.
Issue 5 - March 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
ZXTP25040DFH
Characteristics
Issue 5 - March 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com
ZXTP25040DFH
Electrical characteristics (at T
AMB
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Symbol
BV
CBO
BV
CEO
BV
ECO
BV
EBO
I
CBO
I
EBO
Min.
-45
-40
-3
-7
Typ.
-75
-65
-8.7
-8.2
<-1
<-1
-170
-65
-165
Base-emitter saturation
V
BE(sat)
voltage
Base-emitter turn-on voltage V
BE(on)
Static forward current
transfer ratio
h
FE
300
200
30
Transition frequency
Output capacitance
Turn-on time
Turn-off time
f
T
C
OBO
t
(on)
t
(off)
-930
-830
450
300
60
270
17.4
75.5
320
300 s; duty cycle
2%.
Max.
Unit
V
V
V
V
Conditions
I
C
= -100 A
I
C
= -10mA
(*)
I
E
= -100uA
I
E
= -100 A
V
CB
= -45V
V
CB
= -45V, T
amb
= 100°C
V
EB
= -5.6V
I
C
= -1A, I
B
= -20mA
(*)
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -3A, I
B
= -300mA
(*)
I
C
= -3A, I
B
= -300mA
(*)
I
C
= -3A, V
CE
= -2V
(*)
I
C
= -10mA, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
I
C
= -3A, V
CE
= -2V
(*)
-50
-0.5
-50
-260
-85
-220
-1000
-900
900
nA
A
nA
mV
mV
mV
mV
mV
Collector-emitter saturation V
CE(sat)
voltage
MHz
pF
ns
ns
I
C
= -50mA, V
CE
= -10V
f = 100MHz
V
CB
= -10V, f = 1MHz
(*)
V
CC
= -15V. I
C
= -750mA,
I
B1
= I
B2
= -15mA.
NOTES:
(*) Measured under pulsed conditions. Pulse width
Issue 5 - March 2008
© Zetex Semiconductors plc 2008
4
www.zetex.com
ZXTP25040DFH
Typical characteristics
Issue 5 - March 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com
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