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BAW567DW-7-F

Description
Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1.25V @ 150mA 75V, 150mA, trr=4ns, VF=1.25 V@150mA,PD=200mW
CategoryDiscrete semiconductor    Switching diode   
File Size81KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAW567DW-7-F Overview

Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1.25V @ 150mA 75V, 150mA, trr=4ns, VF=1.25 V@150mA,PD=200mW

BAW567DW-7-F Parametric

Parameter NameAttribute value
Reverse recovery time (trr)4ns
DC reverse withstand voltage (Vr)75V
Average rectified current (Io)150mA
Forward voltage drop (Vf)1.25V @ 150mA
BAW567DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
Please click here to visit our online spice models database.
Features
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
One BAV70 Circuit and One BAW56 Circuit In One Package
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 4 and 5)
Mechanical Data
SOT-363
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
Polarity: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
C
1
C
2
C
2
A
1
A
1
A
2
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
Value
100
75
53
300
150
2.0
1.0
Unit
V
V
V
mA
mA
A
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
(Note 1)
(Note 1)
@ t = 1.0μs
@ t = 1.0s
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
(Note 1)
(Note 1)
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage
Forward Voltage
@T
A
= 25°C unless otherwise specified
(Note 2)
Symbol
V
(BR)R
V
F
Min
75
Max
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
I
R
= 2.5μA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Reverse Current
Total Capacitance
Reverse Recovery Time
Notes:
(Note 2)
I
R
C
T
t
rr
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BAW567DW
Document number: DS30147 Rev. 10 - 2
1 of 3
www.diodes.com
February 2008
© Diodes Incorporated
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