BSS84V
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
-50V
R
DS(on) max
10 @ V
GS
= -5V
I
D
T
A
= 25°
C
-130mA
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q101, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
https://www.diodes.com/products/automotive/automotive-
products/.
This part is qualified to JEDEC standards (as references in
AEC-Q101) for High Reliability.
https://www.diodes.com/quality/product-definitions/
NEW PRODUCT
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Mechanical Data
SOT563
D
2
G
1
S
1
Case: SOT563
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
S
2
G
2
D
1
TOP VIEW
TOP VIEW
Internal Schematic
Ordering Information
(Note 4)
Part Number
BSS84V-7
Notes:
Case
SOT563
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K84
YM
Date Code Key
Year
Code
Month
Code
2005
S
Jan
1
Feb
2
2006
T
Mar
3
2007
U
Apr
4
May
5
2008
V
Jun
6
2009
W
Jul
7
Aug
8
2010
X
Sep
9
2011
Y
Oct
O
Nov
N
2012
Z
Dec
D
October 2019
© Diodes Incorporated
BSS84V
Document number: DS30605 Rev. 10 - 2
1 of 5
www.diodes.com
BSS84V
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 5)
Gate-Source Voltage
Drain Current (Note 6)
Symbol
V
DSS
V
DGR
V
GSS
I
D
Value
-50
-50
20
-130
Units
V
V
V
mA
Continuous
Continuous
NEW PRODUCT
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
j
, T
STG
Value
150
833
-55 to +150
Units
mW
C/W
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
-50
-0.8
0.05
Typ
-75
-1.6
2
10
18
Max
-1
-2
-100
50
-2.0
10
45
25
12
Unit
V
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -50V, V
GS
= 0V, T
J
= +25C
V
DS
= -50V, V
GS
= 0V, T
J
= +125C
V
DS
= -25V, V
GS
= 0V, T
J
= +25C
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= -0.100A
V
DS
= -25V, I
D
= -0.1A
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50, V
GS
= -10V
5. R
GS
20K.
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown in Diodes Incorporated’s package outline PDFs, which can be
found on our website at http://www.diodes.com/package-outlines.html.
7. Short duration pulse test used to minimize self-heating effect.
BSS84V
Document number: DS30605 Rev. 10 - 2
2 of 5
www.diodes.com
October 2019
© Diodes Incorporated
BSS84V
250
200
P
D
, POWER DISSIPATION (mW)
-1.4
-1.2
I
D
, DRAIN CURRENT (A)
150
125
100
75
50
25
0
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
NEW PRODUCT
175
75
125
25
50
100
150
T
A
,
,
AMBIENT TEMPERATURE
(癈 )
(C)
A
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
-1
-0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 -5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Typical Output Characteristics
3.0
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
-5
2.5
I
D
, DRAIN CURRENT (A)
V
DS
= -10V
-0.1
2.0
1.5
-0.01
1.0
0.5
0
-0.001
-0.001
0
-1
-2
-3
-4
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 3 Typical Transfer Characteristics
-0.01
-0.1
-1
I
D
, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
-1
8
I
DR
, REVERSE DRAIN CURRENT (A)
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
7
6
5
4
3
2
1
0
0
-4
-10
-2
-6
-8
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 5 Static Drain-Source On-Resistance vs.
Gate-Source Voltage
-0.1
-0.01
-0.001
0
-0.5
-1.5
-1.0
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Fig. 6 Reverse Drain Current vs.
Body Diode Forward Voltage
BSS84V
Document number: DS30605 Rev. 10 - 2
3 of 5
www.diodes.com
October 2019
© Diodes Incorporated
BSS84V
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT563
A
NEW PRODUCT
B
C
D
G
K
M
SOT563
Dim Min
Max Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
-
-
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
H
L
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT563
C2
C2
Z
G
C1
Y
X
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
1.7
C1
0.5
C2
BSS84V
Document number: DS30605 Rev. 10 - 2
4 of 5
www.diodes.com
October 2019
© Diodes Incorporated
BSS84V
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
www.diodes.com
NEW PRODUCT
BSS84V
Document number: DS30605 Rev. 10 - 2
5 of 5
www.diodes.com
October 2019
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
