DMT10H010LSS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
100V
R
DS(ON)
Max
9.5mΩ @ V
GS
= 10V
I
D
MAX
T
C
= +25°
C
29.5A
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low R
DS(ON)
– Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ADVANCE INFORMATION
ADVANCED INFORMATION
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize R
DS(ON)
and yet maintain superior switching
performance. This device is ideal for use in Notebook battery power
management and Load switch.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
D
SO-8
S
S
S
G
D
D
D
D
Top View
Internal Schematic
G
S
Equivalent circuit
Top View
Ordering Information
(Note 4)
Part Number
DMT10H010LSS-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
8
5
T1010LS
YY WW
1
4
= Manufacturer’s Marking
T1010LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 18 = 2018)
WW = Week (01 to 53)
DMT10H010LSS
Document number: DS38035 Rev.6 - 2
1 of 7
www.diodes.com
February 2018
© Diodes Incorporated
DMT10H010LSS
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6), V
GS
= 10V
Steady
State
Steady
State
T
A
= +25°
C
T
A
= +70°
C
T
C
= +25°
C
T
C
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
100
±20
11.5
9.2
29.5
18.6
75
3
10
15
Unit
V
V
A
A
A
A
A
mJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCED INFORMATION
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8), L=0.3mH
Avalanche Energy (Note 8), L=0.3mH
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.4
90
48.8
1.9
66
35.8
10.1
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C/W
°
C
Electrical Characteristics
(T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
100
—
—
1.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.9
8
9
10
0.8
4166
764
44
2
58.4
11.4
14.2
11.6
14.1
42.9
22
49.8
85.1
Max
—
1
±100
2.8
9.5
12
14.5
1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= 80V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 13A
V
GS
= 6V, I
D
= 13A
V
GS
= 4.5V, I
D
= 5A
V
GS
= 0V, I
S
= 13A
V
DS
= 50V, V
GS
= 0V
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DD
= 50V, I
D
= 13A,
V
GS
= 10V
pF
Ω
nC
ns
V
DD
= 50V, V
GS
= 10V,
I
D
= 13A, R
g
= 6Ω
ns
nC
I
F
= 13A, di/dt = 100A/µs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT10H010LSS
Document number: DS38035 Rev.6 - 2
2 of 7
www.diodes.com
February 2018
© Diodes Incorporated
DMT10H010LSS
30.0
V
GS
=4.0V
25.0
I
D
, DRAIN CURRENT (A)
20.0
15.0
10.0
5.0
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
V
GS
=4.5V
V
GS
=5.0V
25
V
GS
=3.5V
I
D
, DRAIN CURRENT (A)
20
15
10
5
175℃
0
1
-55℃
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
6
30
V
DS
=5V
NEW PRODUCT
ADVANCE INFORMATION
ADVANCED INFORMATION
V
GS
=6.0V
V
GS
=10.0V
125℃
150℃
85℃
25℃
V
GS
=3.0V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.011
0.01
V
GS
= 4.5V
0.009
0.008
0.007
0.006
0.005
0.004
4
6
8 10 12 14 16 18 20
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0
2
V
GS
= 6V
V
GS
= 10V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.012
0.05
0.04
I
D
= 13A
0.03
0.02
I
D
= 5A
0.01
0
0
2
4
6
8
10
12
14
16
18
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
6
8 10 12 14 16 18 20
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
0
2
4
25℃
-55℃
125℃
85℃
V
GS
= 10V
150℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
2.5
V
GS
= 10V, I
D
= 13A
V
GS
= 6V, I
D
= 13A
2
1.5
1
V
GS
= 4.5V, I
D
= 5A
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
DMT10H010LSS
Document number: DS38035 Rev.6 - 2
3 of 7
www.diodes.com
February 2018
© Diodes Incorporated
DMT10H010LSS
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS(TH),
GATE THRESHOLD VOLTAGE (V)
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS
= 10V, I
D
= 13A
V
GS
= 4.5V, I
D
= 5A
V
GS
= 6V, I
D
= 13A
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
-25
I
D
=1mA
NEW PRODUCT
ADVANCE INFORMATION
ADVANCED INFORMATION
I
D
=250μA
30
25
I
S,
SOURCE CURRENT (A)
20
15
10
5
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
1.5
V
GS
=0V, T
J
=85℃
V
GS
=0V, T
J
=25℃
V
GS
=0V, T
J
=-55℃
10000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
1000
C
oss
100
C
rss
10
f=1MHz
1
0
20
40
60
80
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
V
GS
=0V, T
J
=125℃
V
GS
=0V, T
J
=150℃
V
GS
=0V, T
J
=175℃
100
10
10
R
DS(on)
Limited
8
I
D
, DRAIN CURRENT (A)
DC
6
V
GS
(V)
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
4
V
DS
= 50V, I
D
= 13A
0.1
T
J(m ax)
= 150°
C
T
A
= 25°
C
P
W
= 1ms
P
W
= 100µ
s
2
0.01
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
0
0
10
20
30
Qg (nC)
Figure 11. Gate Charge
40
50
60
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
1000
DMT10H010LSS
Document number: DS38035 Rev.6 - 2
4 of 7
www.diodes.com
February 2018
© Diodes Incorporated
DMT10H010LSS
1
r(t), TRANSI ENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
NEW PRODUCT
ADVANCE INFORMATION
ADVANCED INFORMATION
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 90°
C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100
1000
D = Single Pulse
0.001
0.00001
0.0001
DMT10H010LSS
Document number: DS38035 Rev.6 - 2
5 of 7
www.diodes.com
February 2018
© Diodes Incorporated
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