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ZTX653

Description
Transistor type: NPN Collector current Ic: 2A Collector-emitter breakdown voltage Vce: 100V Rated power: 1W NPN 100V 2A
CategoryDiscrete semiconductor    triode   
File Size79KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZTX653 Overview

Transistor type: NPN Collector current Ic: 2A Collector-emitter breakdown voltage Vce: 100V Rated power: 1W NPN 100V 2A

ZTX653 Parametric

Parameter NameAttribute value
Transistor typeNPN
Collector current Ic2A
Collector-emitter breakdown voltage Vce100V
rated power1W
ZTX652 Not Recommended for
New Design Please Use ZTX653
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
ZTX652
ZTX653
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX653
MAX. MIN. TYP.
120
100
5
0.1
10
I
EBO
0.13
0.23
0.9
0.8
0.1
0.3
0.5
1.25
1
0.13
0.23
0.9
0.8
MAX.
ZTX652
100
80
5
6
2
1
5.7
E-Line
TO92 Compatible
ZTX653
120
100
UNIT
V
V
V
A
A
W
mW/°C
°C
Operating and Storage Temperature Range
ZTX652
MIN. TYP.
100
80
5
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
UNIT CONDITIONS.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=80V
V
CB
=100V
V
CB
=80V,
T
amb
=100°C
V
CB
=100V,
T
amb
=100°C
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
IC=1A, V
CE
=2V*
0.1
10
0.1
0.3
0.5
1.25
1
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
BE(on)
V
V
V
V
3-222

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