ZTX652 Not Recommended for
New Design Please Use ZTX653
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
ZTX652
ZTX653
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX653
MAX. MIN. TYP.
120
100
5
0.1
10
I
EBO
0.13
0.23
0.9
0.8
0.1
0.3
0.5
1.25
1
0.13
0.23
0.9
0.8
MAX.
ZTX652
100
80
5
6
2
1
5.7
E-Line
TO92 Compatible
ZTX653
120
100
UNIT
V
V
V
A
A
W
mW/°C
°C
Operating and Storage Temperature Range
ZTX652
MIN. TYP.
100
80
5
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
UNIT CONDITIONS.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=80V
V
CB
=100V
V
CB
=80V,
T
amb
=100°C
V
CB
=100V,
T
amb
=100°C
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
IC=1A, V
CE
=2V*
0.1
10
0.1
0.3
0.5
1.25
1
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
BE(on)
V
V
V
V
3-222
ZTX652 Not Recommended for
New Design Please Use ZTX653
ZTX652
ZTX653
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX652
MIN. TYP.
Transition
Frequency
Switching Times
f
T
t
on
t
off
Output Capacitance C
obo
140
175
80
1200
30
ZTX653
MAX. MIN. TYP.
140
175
80
1200
30
MAX.
MHz
ns
ns
pF
I
C
=100mA, V
CE
=5V
f=100MHz
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
V
CB
=10V f=1MHz
UNIT CONDITIONS.
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance: Junction to Ambient
1
Junction to Ambient
2
Junction to Case
SYMBOL
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t
1
D=t
1
/t
P
t
P
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5
0
per
at u
re
D=0.2
D=0.1
Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-223
ZTX652 Not Recommended for
New Design Please Use ZTX653
ZTX652
ZTX653
TYPICAL CHARACTERISTICS
0.6
0.5
225
V
CE(sat)
- (Volts)
0.4
0.3
0.2
0.1
0
I
C
/I
B
=10
h
FE
- Gain
175
V
CE
=2V
125
75
0.0001
0.001
0.01
0.1
1
10
25
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
h
FE
v I
C
1.4
1.2
V
BE(sat)
- (Volts)
1.2
1.0
V
BE
- (Volts)
1.0
V
CE
=2V
0.8
I
C
/I
B
=10
0.8
0.6
0.6
0.4
0.0001
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
10
Single Pulse Test at T
amb
=25°C
td
tr
tf
ns
280
V
BE(on)
v I
C
I
C
- Collector Current (Amps)
I
B1
=I
B2
=I
C
/10
ts
ns
2800
2400
2000
1600
1200
800
400
0
0.01
tf
td
tr
ts
1
240
Switching time
ZTX652
ZTX653
200
160
120
80
40
0
0.1
D.C.
1s
100ms
10ms
1.0ms
100µs
0.1
1
0.01
0.1
1
10
100
V
CE
-
Collector Voltage (Volts)
I
C
-
Collector Current (Amps)
Safe Operating Area
Switching Speeds
3-224
京公网安备 11010802033920号
EEWORLD
