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BAS70-04T-7-F

Description
DC reverse withstand voltage (Vr): 70V Average rectified current (Io): 70mA Forward voltage drop (Vf): 1V @ 15mA 70V, 0.07A, VF=0.41V@1mA
CategoryDiscrete semiconductor    Schottky diode   
File Size79KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAS70-04T-7-F Overview

DC reverse withstand voltage (Vr): 70V Average rectified current (Io): 70mA Forward voltage drop (Vf): 1V @ 15mA 70V, 0.07A, VF=0.41V@1mA

BAS70-04T-7-F Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)70V
Average rectified current (Io)70mA
Forward voltage drop (Vf)1V @ 15mA
BAS70T /-04T /-05T /-06T
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Please click here to visit our online spice models database.
Features
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and ESD Protection
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Marking Information: See Page 2
Ordering Information, See Page 2
Weight: 0.002 grams (approximate)
Top View
BAS70T
BAS70-04T
BAS70-05T
BAS70-06T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
Value
70
49
70
100
Unit
V
V
mA
mA
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current
(Note 1)
@ t
p
<
1.0s
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating Temperature Range
Storage Temperature Range
(Note 1)
(Note 1)
Symbol
P
D
R
θ
JA
T
J
T
STG
Value
150
833
-55 to +125
-65 to +150
Unit
mW
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Leakage Current
Total Capacitance
Reverse Recovery Time
Notes:
@T
A
= 25°C unless otherwise specified
(Note 2)
Symbol
V
(BR)R
V
F
(Note 2)
I
R
C
T
Min
70
Max
410
1000
100
2.0
5.0
Unit
mV
nA
pF
ns
Test Condition
I
R
=
10μA
t
p
<300µs
,
I
F
=
1.0mA
t
p
<300µs
,
I
F
=
15mA
t
p
< 300µs
,
V
R
= 50V
V
R
= 0V
,
f = 1.0MHz
I
F
= I
R
= 10mA to IR = 1.0mA,
I
rr
= 0.1 x
I
R
, R
L
= 100Ω
t
rr
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BAS70T /-04T /-05T /-06T
Document number: DS30261 Rev. 11 - 2
1 of 3
www.diodes.com
July 2008
© Diodes Incorporated
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