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DMP3030SN-7

CategoryDiscrete semiconductor    triode   
File Size107KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DMP3030SN
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
SC59
NEW PRODUCT
Case: SC59
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.014 grams (approximate)
Drain
D
Gate
ESD protected
TOP VIEW
Gate
Protection
Diode
Source
G
S
Internal Schematic
EQUIVALENT CIRCUIT
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
-30
±20
-0.7
-2.8
Unit
V
V
A
A
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady State
Pulsed Drain Current (Note 3)
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
P
d
R
θ
JA
T
j
, T
STG
Value
500
250
-65 to +150
Unit
mW
°C/W
°C
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
t
r
t
f
Min
-30
-1.0
Typ
0.20
0.35
1
-0.8
160
120
50
10
25
25
40
Max
-10
±10
-3.0
0.25
0.45
-1.1
Unit
V
μA
μA
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= -10V, I
D
= -1.0mA
V
GS
= -10V, I
D
= -0.4A
V
GS
= -4.5V, I
D
= -0.4A
V
DS
= -10V, I
D
= -0.4A
V
GS
= 0V, I
S
= -0.7A
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Notes:
1.
2.
3.
4.
5.
V
DD
= -10V, I
D
= -0.4A,
V
GS
= -5.0V, R
GEN
= 50Ω
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width
≤10μS,
Duty Cycle
≤1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMP3030SN
Document number: DS30787 Rev. 5 - 2
1 of 4
www.diodes.com
August 2011
© Diodes Incorporated

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