(Note 5) (Voltages to GND, unless otherwise specified.)
Symbol
V
IN
V
AUX
V
ISM
V
SENSE
V
GATE
I
GATE
V
FLAG
V
PWM
, V
ADJ
,
V
TADJ
, V
GI
T
J
T
ST
Caution:
Parameter
Input Supply Voltage Relative to GND
Auxiliary Supply Voltage Relative to GND
Current Monitor Input Relative to GND
Current Monitor Sense Voltage (V
IN
-V
ISM
)
Gate Driver Output Voltage
Gate Driver Continuous Output Current
Flag Output Voltage
Other Input Pins
Maximum Junction Temperature
Storage Temperature
Rating
-0.3 to +65
-0.3 to +65
-0.3 to +65
-0.3 to +5
-0.3 to +20
18
-0.3 to 40
-0.3 to +5.5
150
-55 to +150
Unit
V
V
V
V
V
mA
V
V
°C
°C
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and
transporting these devices.
Package Thermal Data
Thermal Resistance
Junction-to-Ambient, θ
JA
(Note 6)
Junction-to-Case, θ
JC
Notes:
Package
TSSOP-16EP
TSSOP-16EP
Typical
50
23
Unit
°C/W
°C/W
5. For correct operation SGND and PGND should always be connected together.
6. Measured on High Effective Thermal Conductivity Test Board" according JESD51.
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