NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* 180 Volt V
CEO
* Gain of 500 at I
C
=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
* Relay / solenoid drivers
ZTX696B
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation *
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
180
180
5
1
0.5
1.5
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
mW/°C
°C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
500
150
3-247
MIN.
180
180
5
0.1
0.1
0.2
0.2
0.25
0.9
0.9
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=145V
V
EB
=4V
I
C
=50mA, I
B
=0.5mA*
I
C
=100mA, I
B
=2mA*
I
C
=200mA, I
B
=5mA*
I
C
=200mA, I
B
=5mA*
I
C
=200mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=5V*
V
V
V
V
V
ZTX696B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
SYMBOL
f
T
C
ibo
C
obo
t
on
t
off
MIN.
70
TYP.
MAX.
UNIT
MHz
pF
pF
ns
ns
CONDITIONS.
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CE
=10V, f=1MHz
I
C
=100mA, I
B!
=10mA
I
B2
=10mA, V
CC
=50V
200
6
80
4400
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
SYMBOL
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
3-248
Talking
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