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DMN2056U-7

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 38mΩ @ 3.6A, 4.5V Maximum power dissipation ( Ta=25°C): 940mW Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size306KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DMN2056U-7 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 38mΩ @ 3.6A, 4.5V Maximum power dissipation ( Ta=25°C): 940mW Type: N-channel

DMN2056U-7 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C4A
Gate-source threshold voltage1V @ 250uA
Drain-source on-resistance38mΩ @ 3.6A,4.5V
Maximum power dissipation (Ta=25°C)940mW
typeN channel
DMN2056U
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
max
38mΩ @ V
GS
= 4.5V
20V
45mΩ @ V
GS
= 2.5V
3.7A
I
D
max
T
A
= +25°
C
4.0A
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
D
D
G
G
S
S
Top View
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMN2056U-7
DMN2056U-13
Notes:
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
56U = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
56U
Date Code Key
Year
Code
Month
Code
2016
D
Jan
1
Feb
2
2017
E
Mar
3
YM
2018
F
Apr
4
May
5
2019
G
Jun
6
2020
H
Jul
7
Aug
8
2021
I
Sep
9
2022
J
Oct
O
Nov
N
2023
K
Dec
D
June 2016
© Diodes Incorporated
DMN2056U
Document number: DS38480 Rev. 1 - 2
1 of 7
www.diodes.com

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Description Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 38mΩ @ 3.6A, 4.5V Maximum power dissipation ( Ta=25°C): 940mW Type: N-channel MOSFET N-CHANNEL 20V 4A SOT23-3
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