DPLS350Y
50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89
Features
BV
CEO
> -50V
I
C
= -3A High Continuous Collector Current
I
CM
up to -5A Peak Pulse Current
2W Power Dissipation
Low Saturation Voltage V
CE(sat)
< -180mV @ 1A
R
CE(sat)
= 67mΩ @ 2A for a Low Equivalent On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.052 grams (Approximate)
SOT89
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Part Number
DPLS350Y-13
DPLS350Y-13R
DPLS350YTC
Notes:
Marking
P35
P35
P35
Reel Size (inches)
13
13
13
Tape Width (mm)
12
12
12
Quantity per Reel
2,500
4,000
4,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
.
Marking Information
(Top View)
P35 = Product Type Marking Code:
YWW = Date Code Marking
Y = Last Digit of Year ex: 5 = 2015
WW = Week Code 01 - 53
YWW
P35
DPLS350Y
Document number: DS31149 Rev. 9 - 2
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November 2015
© Diodes Incorporated
DPLS350Y
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
-50
-50
-6
-3
-5
-500
Unit
V
V
V
A
A
mA
Thermal Characteristics
Characteristic
Power Dissipation
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Symbol
P
D
Value
1
1.6
2.0
125
78
62.5
5.7
-55 to +150
Unit
W
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J,
T
STG
°C/W
°C/W
°C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DPLS350Y
Document number: DS31149 Rev. 9 - 2
2 of 8
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November 2015
© Diodes Incorporated
DPLS350Y
Thermal Characteristics and Derating Information
Max Power Dissipation (W)
Thermal Resistance (°C/W)
1.0
0.8
0.6
0.4
0.2
0.0
120
100
80
D=0.5
60
40
20
0
100µ
1m
10m 100m
1
D=0.2
Single Pulse
D=0.05
D=0.1
0
25
50
75
100
125
150
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
100
Single Pulse. T
amb
=25°C
Transient Thermal Impedance
Max Power Dissipation (W)
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
Thermal Resistance (°C/W)
140.0
3
Maximum Power (W)
T
amb
=25°C
120.0
100.0
80.0
1oz copper
2oz copper
2
1oz copper
1
60.0
40.0
2oz copper
0
500
1000
1500
2000
2500
0
T
amb
=25°C
0
500
1000
1500
2000
2500
Copper Area (sqmm)
Copper Area (sqmm)
DPLS350Y
Document number: DS31149 Rev. 9 - 2
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November 2015
© Diodes Incorporated
DPLS350Y
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector-Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CBO
I
EBO
Min
-50
-50
-6
—
—
—
200
200
Static Forward Current Transfer Ratio (Note 10)
h
FE
200
130
80
—
Typ
—
—
—
—
—
—
Max
—
—
—
-100
-100
-50
-100
—
—
450
—
—
-90
-180
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
—
—
-320
-270
-390
Equivalent On-Resistance
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Current (Note 10)
Transition Frequency
Collector Output Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Note:
Unit
V
V
V
nA
nA
µA
nA
Test Condition
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA
V
CE
= -50V
V
CB
= -50V
V
CB
= -50V, T
A
= +150°C
V
EB
= -5V
I
C
= -100mA, V
CE
= -2V
I
C
= -500mA, V
CE
= -2V
—
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -3A, V
CE
= -2V
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
mV
I
C
= -2A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -3A, I
B
= -300mA
R
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
t
(ON)
t
D
t
R
t
(OFF)
t
S
t
F
—
—
—
100
—
—
—
—
—
—
—
67
—
—
—
—
87
41
46
294
250
44
135
-1.1
-1.2
-1.1
—
35
—
—
—
—
—
—
mΩ
V
V
MHz
pF
ns
ns
ns
ns
ns
ns
I
C
= -2A, I
B
= -200mA
I
C
= -2A, I
B
= -100mA
I
C
= -3A, I
B
= -300mA
I
C
= -1A, V
CE
= -2V
I
C
= -100mA, V
CE
= -5V,
f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
V
CC
= -30v,
I
CC
= 150mA
I
B1
= - I
B2
=15mA
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
DPLS350Y
Document number: DS31149 Rev. 9 - 2
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© Diodes Incorporated
DPLS350Y
I
B
= -10mA
V
CE
= -2V
-I
C
, COLLECTOR CURRENT (A)
h
FE
, DC CURRENT GAIN
I
B
= -8mA
TA = 150°C
I
B
= -6mA
TA = 85°C
I
B
= -4mA
TA = 25°C
I
B
= -2mA
TA = -55°C
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 1 Typical Collector Current vs.Collector-Emitter Voltage
0
-I
C
, COLLECTOR CURRENT (A)
Figure 2 Typical DC Current Gain
vs. Collector Current
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
0.3
I
C
/I
B
= 10
V
CE
= -2V
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.2
TA = -55°C
TA = 25°C
0.1
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
TA = 85°C
TA = 150°C
0
0.0001
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-I
C
, COLLECTOR CURRENT (A)
Figure 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
I
C
/I
B
= 10
TA = -55°C
TA = 25°C
TA = 85°C
TA = 150°C
-I
C
, COLLECTOR CURRENT (A)
Figure 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
C
obo
, OUTPUT CAPACITANCE (pF)
f = 1MHz
V
R
, REVERSE VOLTAGE (V)
Figure 6 Typical Output Capacitance Characteristics
DPLS350Y
Document number: DS31149 Rev. 9 - 2
5 of 8
www.diodes.com
November 2015
© Diodes Incorporated
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