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MB85RC04VPNF-G-JNERE1

Description
Memory interface type: I2C Memory capacity: 4Kb (512 x 8) Operating voltage: 3V ~ 5.5V Memory type: Non-Volatile 4-Kbit (512 × 8bit), I2C interface, operating voltage: 3.0V to 5.5V
Categorystorage    FRAM memory   
File Size1MB,36 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
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MB85RC04VPNF-G-JNERE1 Overview

Memory interface type: I2C Memory capacity: 4Kb (512 x 8) Operating voltage: 3V ~ 5.5V Memory type: Non-Volatile 4-Kbit (512 × 8bit), I2C interface, operating voltage: 3.0V to 5.5V

MB85RC04VPNF-G-JNERE1 Parametric

Parameter NameAttribute value
Memory architecture (format)FRAM
Memory interface typeI2C
memory capacity4Kb (512 x 8)
Operating Voltage3V ~ 5.5V
memory typeNon-Volatile
FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00016-2v0-E
Memory FRAM
4 K (512
×
8) Bit I
2
C
MB85RC04V
DESCRIPTION
The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512
words
×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
Unlike SRAM, the MB85RC04V is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC04V has improved to be at
least 10
12
cycles, significantly outperforming other nonvolatile memory products in the number.
The MB85RC04V does not need a polling sequence after writing to the memory such as the case of Flash
memory or E
2
PROM.
FEATURES
Bit configuration
: 512 words
×
8 bits
Two-wire serial interface
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
Operating frequency
: 1 MHz (Max)
Read/write endurance
: 10
12
times / byte
Data retention
: 10 years (
+
85
°C),
95 years (
+
55
°C),
over 200 years (
+
35
°C)
Operating power supply voltage : 3.0 V to 5.5 V
Low-power consumption
: Operating power supply current 90
μA
(Typ @1 MHz)
Standby current 5
μA
(Typ)
• Operation ambient temperature range
:
40
°C
to
+
85
°C
• Package
: 8-pin plastic SOP (FPT-8P-M02)
RoHS compliant
Copyright©2012-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2013.2

MB85RC04VPNF-G-JNERE1 Related Products

MB85RC04VPNF-G-JNERE1
Description Memory interface type: I2C Memory capacity: 4Kb (512 x 8) Operating voltage: 3V ~ 5.5V Memory type: Non-Volatile 4-Kbit (512 × 8bit), I2C interface, operating voltage: 3.0V to 5.5V
Memory architecture (format) FRAM
Memory interface type I2C
memory capacity 4Kb (512 x 8)
Operating Voltage 3V ~ 5.5V
memory type Non-Volatile
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