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MB85RS64TPNF-G-JNERE2

Description
Memory interface type: SPI Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile
Categorystorage    FRAM memory   
File Size1MB,34 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
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MB85RS64TPNF-G-JNERE2 Overview

Memory interface type: SPI Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile

MB85RS64TPNF-G-JNERE2 Parametric

Parameter NameAttribute value
Memory architecture (format)FRAM
Memory interface typeSPI
memory capacity64Kb (8K x 8)
Operating Voltage1.8V ~ 3.6V
memory typeNon-Volatile
FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00051-1v0-E
Memory FRAM
64 K (8 K
8) Bit SPI
MB85RS64T
DESCRIPTION
MB85RS64T is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
MB85RS64T adopts the Serial Peripheral Interface (SPI).
The MB85RS64T is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS64T can be used for 10
13
read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E
2
PROM.
MB85RS64T does not take long time to write data like Flash memories or E
2
PROM, and MB85RS64T takes
no wait time.
FEATURES
• Bit configuration : 8,192 words
8 bits
• Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Operating frequency : 10 MHz (Max)
• High endurance : 10
13
times / byte
• Data retention
: 10 years (
85
C)
• Operating power supply voltage : 1.8 V to 3.6 V
• Low power consumption : Operating power supply current 0.8 mA (Max@10 MHz)
Standby current 9
A
(Typ)
• Operation ambient temperature range :
40
C
to +85
C
• Package
: 8-pin plastic SOP (FPT-8P-M02)
8-pin plastic SON (LLC-8P-M04)
RoHS compliant
Copyright 2017FUJITSU SEMICONDUCTOR LIMITED
2017.12

MB85RS64TPNF-G-JNERE2 Related Products

MB85RS64TPNF-G-JNERE2 MB85RS64TPN-G-AMEWE1
Description Memory interface type: SPI Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile Memory interface type: SPI Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile 64K (8K × 8bit) SPI interface 1.8V ~ 3.6V
Memory architecture (format) FRAM FRAM
Memory interface type SPI SPI
memory capacity 64Kb (8K x 8) 64Kb (8K x 8)
Operating Voltage 1.8V ~ 3.6V 1.8V ~ 3.6V
memory type Non-Volatile Non-Volatile

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