MB85RS64TPN-G-AMEWE1 datasheet, PDF

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MB85RS64TPN-G-AMEWE1: DescriptionMemory interface type: SPI Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile 64K (8K × 8bit) SPI interface 1.8V ~ 3.6V; Categorystorage FRAM memory; File Size1MB，34 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MB85RS64TPN-G-AMEWE1 Overview

Memory interface type: SPI Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile 64K (8K × 8bit) SPI interface 1.8V ~ 3.6V

MB85RS64TPN-G-AMEWE1 Parametric

Parameter Name	Attribute value
Memory architecture (format)	FRAM
Memory interface type	SPI
memory capacity	64Kb (8K x 8)
Operating Voltage	1.8V ~ 3.6V
memory type	Non-Volatile

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS501-00051-1v0-E

Memory FRAM

64 K (8 K



8) Bit SPI

MB85RS64T

■

DESCRIPTION

MB85RS64T is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words



8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

memory cells.

MB85RS64T adopts the Serial Peripheral Interface (SPI).

The MB85RS64T is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS64T can be used for 10

read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E

PROM.

MB85RS64T does not take long time to write data like Flash memories or E

PROM, and MB85RS64T takes

no wait time.

■

FEATURES

• Bit configuration : 8,192 words



8 bits

• Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 10 MHz (Max)

• High endurance : 10

times / byte

• Data retention

: 10 years (



C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power consumption : Operating power supply current 0.8 mA (Max@10 MHz)

Standby current 9

A

(Typ)

• Operation ambient temperature range :



C

to +85

C

• Package

: 8-pin plastic SOP (FPT-8P-M02)

8-pin plastic SON (LLC-8P-M04)

RoHS compliant

2017.12

MB85RS64TPN-G-AMEWE1 Related Products

	MB85RS64TPN-G-AMEWE1	MB85RS64TPNF-G-JNERE2
Description	Memory interface type: SPI Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile 64K (8K × 8bit) SPI interface 1.8V ~ 3.6V	Memory interface type: SPI Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile
Memory architecture (format)	FRAM	FRAM
Memory interface type	SPI	SPI
memory capacity	64Kb (8K x 8)	64Kb (8K x 8)
Operating Voltage	1.8V ~ 3.6V	1.8V ~ 3.6V
memory type	Non-Volatile	Non-Volatile

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