BSC042NE7NS3G datasheet, PDF - EEWORLD Datasheet

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BSC042NE7NS3G: DescriptionDrain-source voltage (Vdss): 75V Continuous drain current (Id) (at 25°C): 19A Gate-source threshold voltage: 3.8V @ 91uA Drain-source on-resistance: 4.2mΩ @ 50A, 10V Maximum power dissipation ( Ta=25°C): 2.5W Type: N channel N channel, 75V, 100A, 4.2mΩ@10V; CategoryDiscrete semiconductor The transistor; File Size588KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSC042NE7NS3G Overview

Drain-source voltage (Vdss): 75V Continuous drain current (Id) (at 25°C): 19A Gate-source threshold voltage: 3.8V @ 91uA Drain-source on-resistance: 4.2mΩ @ 50A, 10V Maximum power dissipation ( Ta=25°C): 2.5W Type: N channel N channel, 75V, 100A, 4.2mΩ@10V

BSC042NE7NS3G Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	TDSON-8
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	220 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V
Maximum drain current (ID)	100 A
Maximum drain-source on-resistance	0.0042 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F5
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	400 A
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BSC042NE7NS3G Related Products

	BSC042NE7NS3G	BSC042NE7NS3 G
Description	Drain-source voltage (Vdss): 75V Continuous drain current (Id) (at 25°C): 19A Gate-source threshold voltage: 3.8V @ 91uA Drain-source on-resistance: 4.2mΩ @ 50A, 10V Maximum power dissipation ( Ta=25°C): 2.5W Type: N channel N channel, 75V, 100A, 4.2mΩ@10V	mosFET N-channel power mos

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