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BSC042NE7NS3 G

Description
mosFET N-channel power mos
Categorysemiconductor    Discrete semiconductor   
File Size588KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BSC042NE7NS3 G Overview

mosFET N-channel power mos

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Description mosFET N-channel power mos Drain-source voltage (Vdss): 75V Continuous drain current (Id) (at 25°C): 19A Gate-source threshold voltage: 3.8V @ 91uA Drain-source on-resistance: 4.2mΩ @ 50A, 10V Maximum power dissipation ( Ta=25°C): 2.5W Type: N channel N channel, 75V, 100A, 4.2mΩ@10V
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