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IRFSL7437PBF

Description
Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 195A (Tc) Gate-source threshold voltage: 3.9V @ 150uA Drain-source on-resistance: 1.8mΩ @ 100A, 10V Maximum power Dissipation (Ta=25°C): 230W(Tc) Type: N-channel
CategoryDiscrete semiconductor    The transistor   
File Size312KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRFSL7437PBF Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 195A (Tc) Gate-source threshold voltage: 3.9V @ 150uA Drain-source on-resistance: 1.8mΩ @ 100A, 10V Maximum power Dissipation (Ta=25°C): 230W(Tc) Type: N-channel

IRFSL7437PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionHALOGEN AND LEAD FREE, PLASTIC, TO-262, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Avalanche Energy Efficiency Rating (Eas)802 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)195 A
Maximum drain current (ID)195 A
Maximum drain-source on-resistance0.0018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
Maximum pulsed drain current (IDM)1000 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
StrongIRFET™
IRFS7437PbF
IRFSL7437PbF
Applications
l
Brushed Motor drive applications
l
BLDC Motor drive applications
l
Battery powered circuits
l
Half-bridge and full-bridge topologies
l
Synchronous rectifier applications
l
Resonant mode power supplies
l
OR-ing and redundant power switches
l
DC/DC and AC/DC converters
l
DC/AC Inverters
HEXFET
®
Power MOSFET
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
D
40V
1.4mΩ
1.8mΩ
250A
195A
c
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
l
Halogen-Free
G
S
G
G
D
S
D
2
Pak
IRFS7437PbF
TO-262
IRFSL7437PbF
D
S
Gate
Drain
Source
Base Part Number
IRFSL7437PbF
IRFS7437PbF
IRFS7437PbF
Package Type
TO-262
D2Pak
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
50
50
800
Orderable Part Number
IRFSL7437PbF
IRFS7437PbF
IRFS7437TRLPbF
(
RDS (on), Drain-to -Source On Resistance m
Ω)
6
250
ID = 100A
LIMITED BY PACKAGE
200
ID , Drain Current (A)
5
4
150
3
TJ = 125°C
100
2
1
TJ = 25°C
50
0
4.0
6.0
8.0
10.0 12.0 14.0 16.0 18.0 20.0
0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
TC , Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
www.irf.com
©
2015 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
January 6, 2015
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