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BSS806NH6327XTSA1

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.3A Gate-source threshold voltage: 750mV @ 11uA Drain-source on-resistance: 57mΩ @ 2.3A, 2.5V Maximum power dissipation (Ta=25°C): 500mW Type: N-channel N-channel, 20V, 2.3A, 57mΩ@2.5V
CategoryDiscrete semiconductor    The transistor   
File Size231KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSS806NH6327XTSA1 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.3A Gate-source threshold voltage: 750mV @ 11uA Drain-source on-resistance: 57mΩ @ 2.3A, 2.5V Maximum power dissipation (Ta=25°C): 500mW Type: N-channel N-channel, 20V, 2.3A, 57mΩ@2.5V

BSS806NH6327XTSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time10 weeks
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)10.8 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)2.3 A
Maximum drain current (ID)2.3 A
Maximum drain-source on-resistance0.057 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)29 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.5 W
Maximum pulsed drain current (IDM)9.3 A
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
BSS806N
OptiMOS
2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Ultra Logic level (1.8V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=2.5 V
V
GS
=1.8 V
I
D
20
57
82
2.3
A
V
PG-SOT23
3
1
2
Type
BSS806N
Package
SOT23
Tape and Reel Information
H6327:
3000 pcs/ reel
Marking
YEs
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=2.3 A,
R
GS
=25
Ω
I
D
=2.3 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
2.3
1.9
9.3
10.8
mJ
Unit
A
Reverse diode dv /dt
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
dv /dt
6
±8
kV/µs
V
W
°C
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
0.5
-55 ... 150
0(<250V)
260 °C
55/150/56
Rev 2.3
page 1
2011-07-11

BSS806NH6327XTSA1 Related Products

BSS806NH6327XTSA1 BSS806N
Description Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.3A Gate-source threshold voltage: 750mV @ 11uA Drain-source on-resistance: 57mΩ @ 2.3A, 2.5V Maximum power dissipation (Ta=25°C): 500mW Type: N-channel N-channel, 20V, 2.3A, 57mΩ@2.5V OptiMOS™2 Small-Signal-Transistor
Is it Rohs certified? conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (ID) 2.3 A 2.3 A
Maximum drain-source on-resistance 0.057 Ω 0.057 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 29 pF 29 pF
JESD-30 code R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Guideline AEC-Q101 AEC-Q101
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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