BSS806N
OptiMOS
™
2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Ultra Logic level (1.8V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=2.5 V
V
GS
=1.8 V
I
D
20
57
82
2.3
A
V
mΩ
PG-SOT23
3
1
2
Type
BSS806N
Package
SOT23
Tape and Reel Information
H6327:
3000 pcs/ reel
Marking
YEs
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=2.3 A,
R
GS
=25
Ω
I
D
=2.3 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
2.3
1.9
9.3
10.8
mJ
Unit
A
Reverse diode dv /dt
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
dv /dt
6
±8
kV/µs
V
W
°C
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
0.5
-55 ... 150
0(<250V)
260 °C
55/150/56
Rev 2.3
page 1
2011-07-11
BSS806N
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - ambient
1)
Values
typ.
max.
Unit
R
thJA
minimal footprint
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSS
V
GS
= 0 V,
I
D
= 250 µA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=11 µA
V
DS
=20 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=20 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=8 V,
V
DS
=0 V
V
GS
=1.8 V,
I
D
=1.3 A
V
GS
=2.5 V,
I
D
=2.3 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=1.9 A
20
0.3
-
-
0.55
-
-
0.75
1
μA
V
-
-
-
-
-
-
57
41
9
100
100
82
57
-
S
nA
mΩ
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
of the PCB.
1)
Rev 2.3
page 2
2011-07-11
BSS806N
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=2.3 A,
T
j
=25 °C
V
R
=10 V,
I
F
=2.3 A,
di
F
/dt =100 A/µs
T
A
=25 °C
-
-
-
-
-
-
-
0.82
11
3.3
0.5
9.3
1.1
-
-
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=10 V,
I
D
=2.3 A,
V
GS
=0 to 2.5 V
-
-
-
-
0.55
0.58
1.7
1.5
-
-
-
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=10 V,
V
GS
=2.5 V,
I
D
=2.3A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=10 V,
f
=1 MHz
-
-
-
-
-
-
-
370
118
20
7.5
9.9
12.0
3.7
529
169
29
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Rev 2.3
page 3
2011-07-11
BSS806N
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥2.5
V
2.5
0.5
2.0
0.375
1.5
P
tot
[W]
0.25
I
D
[A]
1.0
0.5
0.0
0
40
80
120
160
0
20
40
60
80
100
120
140
160
0.125
0
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
2
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
10
1
1 ms
10 ms
100 µs
10 µs
0.5
10
2
0.2
0.1
Z
thJA
[K/W]
10
0
I
D
[A]
0.05
10
1
0.02
0.01
single pulse
10
-1
DC
10
0
10
-2
10
-3
10
-1
10
0
10
1
10
2
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev 2.3
page 4
2011-07-11
BSS806N
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
4
2.5 V
1.8 V
1.6 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
120
1.3 V
1.4 V
100
1.5 V
1.6 V
3
80
1.5 V
R
DS(on)
[mΩ]
I
D
[A]
2
60
1.8 V
2V
1.4 V
40
2.5 V
1
1.3 V
20
1.2 V
1.1 V
0
0
1
2
3
4
1.6
2.0
0
0.0
0.4
0.8
V
DS
[V]
1.2
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
4
20
16
3
12
2
g
fs
[S]
8
150 °C
25 °C
I
D
[A]
1
4
0
0.0
0.5
1.0
1.5
2.0
0
0
2
4
6
8
V
GS
[V]
I
D
[A]
Rev 2.3
page 5
2011-07-11
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