PD - 94825A
IRF3315PbF
l
l
l
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Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET
®
Power MOSFET
D
V
DSS
= 150V
R
DS(on)
= 0.070Ω
G
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
I
D
= 23A
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
23
16
84
94
0.63
± 20
350
12
9.4
2.5
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
0.50
Max.
1.6
62
Units
°C/W
10/07/09
IRF3315PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
150
2.0
17
Typ.
0.187
9.6
32
49
38
4.5
7.5
1300
300
160
Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
0.070
Ω
V
GS
= 10V, I
D
= 12A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
S
V
DS
= 50V, I
D
= 12A
25
V
DS
= 150V, V
GS
= 0V
µA
250
V
DS
= 120V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
95
I
D
= 12A
11
nC V
DS
= 120V
47
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 75V
I
D
= 12A
ns
R
G
= 5.1Ω
R
D
= 5.9Ω, See Fig. 10
D
Between lead,
6mm (0.25in.)
nH
G
from package
and center of die contact
S
V
GS
= 0V
pF
V
DS
= 25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
23
showing the
A
G
integral reverse
84
S
p-n junction diode.
1.3
V
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
174 260
ns
T
J
= 25°C, I
F
= 12A
1.2 1.7
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 4.9mH
max. junction temperature. ( See fig. 11 )
I
SD
≤
12A, di/dt
≤
140A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
R
G
= 25Ω, I
AS
= 12A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
IRF3315PbF
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
I
D
, Drain-to-Source Current (A)
T
J
= 175
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
T
J
= 25
°
C
I
D
= 21A
2.5
2.0
10
1.5
1.0
0.5
1
V DS = 50V
20µs PULSE WIDTH
4
5
6
7
8
9
10
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF3315PbF
3000
2500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 12
A
16
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
C, Capacitance (pF)
2000
Ciss
12
1500
Coss
1000
8
Crss
500
4
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
40
60
80
100
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
10
T
J
= 25
°
C
T
J
= 175
°
C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
1ms
1
0ms
0.1
0.2
V
GS
= 0 V
0.5
0.8
1.1
1.4
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF3315PbF
25
V
DS
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
20
D.U.T.
+
ID, Drain Current (A)
-
V
DD
15
10
Fig 10a.
Switching Time Test Circuit
5
V
DS
90%
0
25
50
75
100
125
150
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1 D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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