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IPB021N06N3 G
IPI024N06N3 G
IPP024N06N3 G
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3 Power-Transistor
Features
Q #451<6 B 78 65AE5>3 I C D89 1>4 C
B
? 89 B
G9 >7
3
I>3 53
Q ( @D J54 D 8>? < 7I 6 B 3 ? >F D C
9
=9
53
?
?
5B
5B
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9H"[Z#
@B 4E3 D ( &
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75
?
Q. 5B < G ? > B 9D 5 +
9H"[Z#
I?
5CC 1>3
Q ' 3 81>>5< >? B < 5<
=1< 5F
1<
5C 54
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9
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9
9
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Product Summary
V
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Type
Package
Marking
E=%ID*.+%+
(*)C(.C
E=%ID*.*%+
(*,C(.C
E=%ID**(%+
(*,C(.C
Maximum ratings,
1D
V
T E>< C ? D G95 C 954
T
5C 85B C @53 6
9
Parameter
? >D EC 4B > 3 EB5>D
9
>E?
19
B
Symbol Conditions
I
9
T
8
T
*#
Value
)*(
)*(
,0(
.+,
q*(
Unit
6
T
8
) E< 54 4B > 3 EB5>D
C
19
B
+#
F 1>3 85 5>5B C>7< @E< 5
,#
1<
7I 9 5
C
!1D C EB5 F <175
5 ? 3
? D
) ? G5B C 9 9 >
49C@1D
?
( @5B 9 1>4 C ? B D
1D
>7
D 175 5=@5B EB
1D 5
# 3 <=1D 3 1D B #' #
9 9
3
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P
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V
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T
8
T
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9
R
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J
K
T
T
8
T
*-(
EB5>DC <=9 2 I 2 ? >4G95 G9 1>R
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% / D 3 89 9 12 < D 3 1BI
B 9 9 D
54
B
D
8
85
@ C 5 ?
B
, 55 67EB 6 B B 45D < 9 ? B 9 >
9 5 ? =? 5
19 >6 =1D
54
?
,#
, 55 67EB
6 B B 45D < 9 ? B 9 >
9 5
? =? 5
19 >6 =1D
54
?
+ 5F
@175
IPB021N06N3 G
IPI024N06N3 G
IPP024N06N3 G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
-85B B 9D 5 :E>3 D > 3 1C
=1< 5CC 1>3
9
?
5
-85B B 9D 5
=1< 5CC 1>3
:E>3 D > 1=2 9
9
?
5>D
R
`T@8
R
`T@6
=9 =1<6 ? D 9
>9
? @B
>D
3 =V 3 ? ? <>7 1B
-#
9
51
%
%
%
%
(&.
,(
A'K
Electrical characteristics,
1D
V
T E>< C ? D G95 C 954
T
5C 85B C @53 6
9
Static characteristics
B > C EB5 2 B
19 ? 3
51;4? G> F <175
? D
!1D D 5C < F <175
5 8B 8? 4 ? D
05B 71D F <175 4B > 3 EB5>D
?
5 ? D
19
B
V
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V
=H
I
9
=
V
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I
9HH
V
9H
4V
=H
I
9
W
V
9H
V
=H
T
V
T
V
9H
V
=H
T
V
T
!1D ? EB5 <
5 C 3 51;175 3 EB5>D
B
B > C EB5 ? > C 1D B 9D 5
19 ? 3
D 5 5CC 1>3
I
=HH
R
9H"[Z#
V
=H
V
9H
V
=H
I
9
V
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I
9
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!1D B 9D 5
5 5CC 1>3
I^MZ_O[ZPaO`MZOQ
R
=
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R_
gV
9H
g5*gI
9
gR
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%
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== H
== H
== 5@? HI )
9
3 ? >>53 D >
) 9 F D 1<9 C 9 19
9
?
C 5B3
9 > D< B
<
+ G9 3 =
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D
8
1I5B
W= D 3 ; 3 ? @@5B 51 6 B 19
89
1B ? 4B >
+ 5F
@175
IPB021N06N3 G
IPI024N06N3 G
IPP024N06N3 G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
#>@ED 1@13 9 5
3
D
1>3
( ED 3 1@13 9 5
@ED
D
1>3
+ 5F C D1>C 5B 1@13 9 5
5B5 B 6 3
D
1>3
-EB > 45< D
> ?
1I 9
=5
+ 95 D
C 9
=5
-EB 6 45< D
> ? 6 1I 9
=5
1< D
<9
=5
!1D 81B 81B D 9D C
.#
5
S5
13 5B 9
C3
!1D D C EB5 3 81B
5 ? ? 3
75
!1D D 4B > 3 81B
5 ? 19
75
, G9 89 3 81B
D >7
3
75
!1D 3 81B D D
5
75 ? 1<
!1D @< 51E F <175
5 1D
? D
( ED 3 81B
@ED
75
Reverse Diode
9 45 3 ? >D EC 6 B 4 3 EB5>D
?
9
>?
? G1B
B
9 45 @E< 5 3 EB5>D
?
C
B
9 45 6 B 4 F <175
?
? G1B ? D
+ 5F C B ? F I D
5B5 53 5B 9
=5
+ 5F C B ? F I 3 81B
5B5 53 5B
75
.#
C
U__
C
[__
C
^__
t
P"[Z#
t
^
t
P"[RR#
t
R
V
99
V
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I
9
R
=
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V
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V
9H
f
& " J
%
%
%
%
%
%
%
)/(((
+/((
)*(
,)
0(
/1
*,
*+((( \<
,1((
%
%
%
%
%
Z_
Q
S_
Q
SP
Q
_c
Q
S
V
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Q
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V
99
V
=H
V
99
I
9
V
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?
%
%
%
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%
%
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)/
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***
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t
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8
T
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V
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T
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G
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6
J
Z_
Z8
, 55 67EB
6 B 5 3 81B @1B
9 5
? 71D
75
1=5D 456>9? >
5B 9 D
9
+ 5F
@175
IPB021N06N3 G
IPI024N06N3 G
IPP024N06N3 G
1 Power dissipation
P
`[`
4R"T
8
#
2 Drain current
I
9
4R"T
8
V
=H
"
300
140
250
120
100
200
P
tot
[W]
80
150
I
D
[A]
60
40
20
0
0
50
100
150
200
0
50
100
150
200
100
50
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
9
4R"V
9H
T
8
T
D
4(
@1B
1=5D
t
\
5B
10
3
<=9 2 I ? > C 1D
9 D
54
D5
^Q_U_`MZOQ
WC
4 Max. transient thermal impedance
Z
`T@8
4R"t
\
#
@1B
1=5D
D
4t
\
'T
5B
10
0
10
2
(&-
=C
Z
thJC
[K/W]
(&*
I
D
[A]
10
1
98
10
-1
(&)
(&(-
10
0
(&(*
(&()
C>7< @E< 5
9 5
C
10
-1
10
-1
10
0
10
1
10
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
+ 5F
@175
IPB021N06N3 G
IPI024N06N3 G
IPP024N06N3 G
5 Typ. output characteristics
I
9
4R"V
9H
T
V
T
@1B
1=5D
V
=H
5B
400
.
.
6 Typ. drain-source on resistance
R
9H"[Z#
4R"I
9
T
V
T
@1B
1=5D
V
=H
5B
8
.
.
.
.
300
6
.
200
R
DS(on)
[m ]
I
D
[A]
4
.
100
.
2
.
0
0
1
2
3
4
5
0
0
50
100
150
200
250
300
350
400
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
9
4R"V
=H
K
9H
g5*gI
9
gR
9H"[Z#YMd
V
@1B
1=5D
T
V
5B
400
8 Typ. forward transconductance
g
R_
4R"I
9
T
V
T
240
350
200
300
160
250
200
g
fs
[S]
T
T
I
D
[A]
120
150
80
100
40
50
0
0
2
4
6
8
0
0
50
100
150
V
GS
[V]
I
D
[A]
+ 5F
@175
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