SEMICONDUCTOR
TECHNICAL DATA
7 CIRCUIT DARLINGTON TRANSISTOR ARRAY
KID65001AP/AF~
KID65004AP/AF
BIPOLAR LINEAR INTEGRATED CIRCUIT
W
・High
Sustaining Voltage Outputs : 50V Min.
・Output
Clamp Diodes.
・Inputs
Compatible With Various Types of Logic.
・PKG
Type AP : DIP-16Pin AF : FLP-16Pin
TYPE
KID65001AP/AF
KID65002AP/AF
KID65003AP/AF
KID65004AP/AF
INPUT RESISTOR
No (External)
Zener Diode
7V+10.5kΩ
2.7kΩ
10.5kΩ
DESIGNATION
1
16
G
L
・Output
Current : 500mA Max.
d
D
P
H
FEATURES
T
Θ
A
9
8
General Purpose
14½25V P-MOS
TTL, 5V C-MOS
6½15V P-MOS, C-MOS
DIP-16
DIM MILLIMETERS
_
19.3 + 0.2
A
_
6.45 + 0.2
B
_
1.52 + 0.1
D
_
0.46 + 0.1
d
0.50 MIN
G
_
H
3.8 + 0.3
_
3.3 + 0.3
L
2.54
P
0.25+0.1/-0.05
T
W
7.62
0 - 15
Θ
DESCRIPTION:
The KID65001AP/AF Series are high-voltage, high-current
darlington transistor array comprised of seven NPN darlington pairs.
D
P
B
G
H
T
L
All units feature internal clamp diodes for switching inductive loads.
A
16
9
1
8
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
_
9.88 + 0.2
_
3.94 + 0.2
_
6.00 + 0.3
_
0.4 + 0.1
0.15+0.1/-0.05
_
1.63 + 0.2
_
0.65 + 0.2
1.27
0.20+0.1/-0.05
B1
MAXIMUM RATINGS (Ta=25℃, unless otherwise noted)
CHARACTERISTIC
Output Sustaining Voltage
Output Current
Input Voltage
Input Current
Clamp
Diode
Reverse Voltage
Forward Current
SYMBOL
V
CE(SUS)
I
OUT
I
IN
1)
I
IN
2)
V
R
I
F
I
GND
AP
Power Dissipation
AF
Operating Temperature
Storage Temperature
1) Except KID65001AP/AF
2) Only KID65001AP/AF
3) On PCB(30×30×1.6mm, Cu 50%)
4) On PCB (Test Board : JEDEC 2s2p)
T
opr
T
stg
P
D
RATING
50
500
-0.5½+30
25
50
500
2.8
1.47
0.54 / 0.63
3)
/1.25
4)
-40½85
-55½150
UNIT
V
mA/ch
V
mA
V
mA
A
W
W
℃
℃
FLP-16
GND Terminal Current
2014. 9. 16
Revision No : 12
B2
1/7
KID65001AP/AF~KID65004AP/AF
RECOMMENDED OPERATING CONDITIONS (Ta=-40½85℃)
CHARACTERISTIC
Output Sustaining Voltage
SYMBOL
V
CE(SUS)
I
OUT
(AP, T
a
=85℃)
Output Current
I
OUT
(AF, T
a
=85℃)
Input Voltage
Input Current
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
AP
Power Dissipation
AF
* On PCB (30×30×1.6mm, Cu 50%)
** On PCB (Test Board : JEDEC 2s2p)
P
D
V
IN
I
IN
V
R
I
F
Ta=85℃
Ta=85℃
CONDITION
-
T
PW
=25ms, Duty=10%, 7 Circuits
T
PW
=25ms, Duty=30%, 7 Circuits
T
PW
=25ms, Duty=10%, 7 Circuits
T
PW
=25ms, Duty=30%, 7 Circuits
Except KID65001AP/AF
Only KID65001AP/AF
-
-
MIN.
0
0
0
-
-
0
0
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
MAX.
50
370
mA
200
290
mA
150
30
5
50
400
0.76
W
0.28 / 0.32* / 0.65**
V
mA
V
mA
UNIT
V
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise noted)
CHARACTERISTICS
SYMBOL
TEST
CIRCUIT
TEST CONDITION
V
CE
=50V, Ta=25℃
Output Leak
Current
KID65002AP/AF
KID65004AP/AF
Collector-Emitter Saturation Voltage
KID65002AP/AF
Input Current
(Output On)
Output Current
(Output Open)
KID65002AP/AF
KID65003AP/AF
V
IN(ON)
Input Voltage
KID65004AP/AF
5
KID65003AP/AF
KID65004AP/AF
I
IN(OFF)
4
I
IN(ON)
3
V
CE(sat)
2
I
CEX
1
V
CE
=50V, Ta=85℃
V
CE
=50V, V
IN
=6V
V
CE
=50V, V
IN
=1V
I
OUT
=350mA, I
IN
=500μ
A
I
OUT
=200mA, I
IN
=350μ
A
I
OUT
=100mA, I
IN
=250μ
A
V
IN
=17V
V
IN
=3.85V
V
IN
=5V
V
IN
=12V
I
OUT
=500μ Ta=85℃
A,
V
CE
=2V, I
OUT
=300mA
V
CE
=2V, I
OUT
=200mA
V
CE
=2V, I
OUT
=250mA
V
CE
=2V, I
OUT
=300mA
V
CE
=2V, I
OUT
=125mA
V
CE
=2V, I
OUT
=200mA
V
CE
=2V, I
OUT
=275mA
V
CE
=2V, I
OUT
=350mA
KID65002AP/AF
KID65003AP/AF
KID65004AP/AF
DC Current Transfer Ratio
Clamp Diode Reverse Current
Clamp Diode Forward Voltage
Input Capacitance
Turn-ON Delay
Turn-OFF Delay
2014. 9. 16
Revision No : 12
h
FE
I
R
V
F
C
IN
t
ON
t
OFF
2
6
7
-
8
V
IN(OFF)
-
-
-
V
CE
=2V, I
OUT
=350mA
V
R
=50V, Ta=25℃
V
R
=50V, Ta=85℃
I
F
=350mA
-
V
OUT
=50V, R
L
=163Ω,C
L
=15pF
MIN.
-
-
-
-
-
-
-
-
-
-
-
50
-
-
-
-
-
-
-
-
0
0
0
1000
-
-
-
-
-
-
TYP.
-
-
-
-
1.3
1.1
0.9
0.82
0.93
0.35
1.0
65
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
0.1
0.2
MAX.
50
100
500
500
1.6
1.3
1.1
1.25
1.35
0.5
1.45
-
13
2.4
2.7
3.0
5.0
6.0
7.0
8.0
7.4
0.7
1.0
-
50
100
2.0
-
-
-
μ
A
V
pF
μ
s
V
μ
A
mA
V
μ
A
UNIT
3/7
KID65001AP/AF~KID65004AP/AF
Notes : 1.
Pulse Width 50μ Duty Cycle 10%
s,
Output Impedance 50Ω, t
r
≦5ns,
t
f
≦10ns
2. See below
Input Conditions
Type Number
KID65001AP/AF
KID65002AP/AF
KID65003AP/AF
KID65004AP/AF
R
I
2.7kΩ
0
0
0
V
IH
3V
13V
3V
8V
3. C
L
includes probe and Jig capacitance.
2014. 9. 16
Revision No : 12
5/7
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