TVS Diode Arrays
(SPA
®
Diodes)
General Purpose ESD Protection - SP1009 Series
SP1009 Series 30pF 30kV Bidirectional Discrete TVS
Description
RoHS
Pb
GREEN
The SP1009 includes back-to-back Zener diodes fabricated
in a proprietary silicon avalanche technology to provide
protection for electronic equipment that may experience
destructive electrostatic discharges (ESD). These robust
diodes can safely absorb repetitive ESD strikes above the
maximum level specified in the IEC61000-4-2 international
standard (Level 4, ±8 kV contact discharge and ±15 kV air
discharge) without performance degradation. The back-to-
back configuration provides symmetrical ESD protection
for data lines when AC signals are present.
Pinout
Features
• ESD, IEC61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC61000-4-4, 40A
(5/50ns)
• IEC 61000-4-5, 2nd
Edition: 8/20 Surge, 10A
Surge Immunity
• Low leakage current of
0.1μA at 5V
• Space efficient 0201
footprint
• Halogen free, lead-free
and RoHS compliant.
1
2
Functional Block Diagram
• Low capacitance of 30pF
(@ V
R
=0V)
Applications
1
2
• Mobile phones
• Smart phones
• Camcorders
• PDA
• Digital cameras
Application Example
Keypads
P1
P2
P3
P4
• MP3/PMP
• Portable navigation
devices
• Portable medical
• Point of sale terminals
I/O Controller
Outside
World
IC
SP1009 (x4)
GND
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/20/17
SP1009
TVS Diode Arrays
(SPA
®
Diodes)
General Purpose ESD Protection - SP1009 Series
Absolute Maximum Ratings
Symbol
I
PP
T
OP
T
STOR
Parameter
Peak Current (t
p
=8/20μs)
Operating Temperature
Storage Temperature
Value
10.0
-40 to 85
-65 to 150
Units
A
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and
operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Parameter
Storage Temperature Range
Maximum Junction Temperature
Maximum Lead Temperature (Soldering 20-40s)
Rating
-65 to 150
150
260
Units
°C
°C
°C
Electrical Characteristics
(T
OP
=25ºC)
Parameter
Reverse Standoff Voltage
Breakdown Voltage
Leakage Current
Symbol
V
RWM
V
BR
I
LEAK
I
R
=1mA
V
R
=5V with 1 pin at GND
I
PP
=1A, t
p
=8/20µs, Fwd
Clamp Voltage
1
V
C
I
PP
=2A, t
p
=8/20µs, Fwd
I
PP
=10A, t
P
=8/20μs, Fwd
Dynamic Resistance
ESD Withstand Voltage
1
R
DYN
V
ESD
(V
C2
- V
C1
) / (I
PP2
- I
PP1
)
IEC61000-4-2 (Contact Discharge)
IEC61000-4-2 (Air Discharge)
Reverse Bias=0V
Reverse Bias=2.5V
±30
±30
30
23
7
.0
8.5
0.1
9.3
10.0
15.6
0.7
Test Conditions
Min
Typ
Max
6.0
9.5
0.5
Units
V
V
μA
V
V
V
Ω
kV
kV
pF
pF
Diode Capacitance
1
Note:
1
C
D
Parameter is guaranteed by design and/or component characterization.
Product Characteristics
Lead Plating
Lead Material
Lead Coplanarity
Substrate material
Body Material
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-13.
Sn
Copper
6 µm (max)
Silicon
Silicon
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/20/17
TVS Diode Arrays
(SPA
®
Diodes)
General Purpose ESD Protection - SP1009 Series
Capacitance vs. Reverse Bias
40.0
35.0
30.0
8/20μS Pulse Waveform
110%
100%
90%
80%
Capacitance (pF)
20.0
15.0
10.0
5.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
60%
50%
40%
30%
20%
10%
0%
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Bias Voltage (V)
Time ( s)
Clamping Voltage vs. I
PP
18.0
16.0
14.0
Insertion Loss (S21) I/O to GND
5
0
-5
-10
-15
-20
-25
Clamp Voltage (V
C
)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
1.0
Attenuation (dB)
-30
-35
2.0
3.0
4.0
5.0
6.0
7
.0
8.0
9.0
10.0
1
10
100
1000
10000
Peak Pulse Current-I
PP
(A)
Frequency (MHz)
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus) Temp (T
L
)
to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Temperature (t
L
)
Pb – Free assembly
Temperature
T
P
T
L
T
S(max)
Preheat
Ramp-up
t
P
Critical Zone
T
L
to T
P
150°C
200°C
60 – 180 secs
3°C/second max
3°C/second max
217°C
60 – 150 seconds
260
+0/-5
°C
20 – 40 seconds
6°C/second max
8 minutes Max.
260°C
t
L
Ramp-do
Ramp-down
T
S(min)
t
S
time to peak temperature
25
Time
Peak Temperature (T
P
)
Time within 5°C of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/20/17
SP1009
Percent of I
PP
25.0
70%
TVS Diode Arrays
(SPA
®
Diodes)
General Purpose ESD Protection - SP1009 Series
Package Dimensions — 0201 Flipchip
0201 Flipchip
Symbol
D
E
D1
E1
D2
A
A2
A1
0.273
0.265
0.008
Millimeters
Min
0.605
0.305
0.145
0.245
0.4 BSC
0.329
0.315
0.014
Max
0.655
0.355
0.155
0.255
Min
0.023819
0.012008
0.005709
0.009646
0.010748
0.010433
0.000315
Inches
Max
0.025787
0.013976
0.006102
0.010039
0.012953
0.012402
0.000551
0.0157 BSC
Part Numbering System
SP 1009
–
01 W T G
Silicon Protection
Array (SPA
TM
)
Family of
TVS Diode Arrays
Series
Number of
Channels
G= Green
T= Tape & Reel
Package
W: 0201 Flipchip
Part Marking System
Ordering Information
Part Number
SP1009-01WTG
Package
0201 Flipchip
Marking
•
Min. Order Qty.
10000
Embossed Carrier Tape & Reel Specification — 0201 Flipchip
P1
P2
P0
D
E
Symbol
A0
B0
D
D1
Millimeters
0.41+/-0.03
0.70+/-0.03
ø 1.50 + 0.10
ø 0.20 +/- 0.05
1.75+/-0.10
3.50+/-0.05
0.38+/-0.03
2.00+/-0.05
2.00+/-0.05
4.00+/-0.10
8.00+0.30/-0.10
0.23+/-0.02
W
D1
T
F
E
F
K0
P0
P1
P2
W
T
A0
K0 B0
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/20/17
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