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SMCJ33A

Description
Polarity: Unidirectional Peak pulse current (10/1000us): 28.1A Clamping voltage: 53.3V Breakdown voltage (minimum): 36.7V Reverse shutdown voltage (typ.): 33V
CategoryDiscrete semiconductor    diode   
File Size961KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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SMCJ33A Overview

Polarity: Unidirectional Peak pulse current (10/1000us): 28.1A Clamping voltage: 53.3V Breakdown voltage (minimum): 36.7V Reverse shutdown voltage (typ.): 33V

SMCJ33A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerLittelfuse
Parts packaging codeDO-214AB
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys DescriptionDiode TVS Uni-Dir 33V 1500W DO214AB Littelfuse SMCJ33A Uni-Directional TVS Diode, 1500W peak, 2-Pin DO-214AB
Other featuresLOW INDUCTANCE, EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Maximum breakdown voltage40.6 V
Minimum breakdown voltage36.7 V
Breakdown voltage nominal value38.65 V
Maximum clamping voltage53.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Certification statusNot Qualified
GuidelineIEC-61000-4-2, 4-4
Maximum repetitive peak reverse voltage33 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transient Voltage Suppression Diodes
Surface Mount – 1500W > SMCJ series
SMCJ Series
Uni-directional
Bi-directional
Description
RoHS
Pb
e3
The SMCJ series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• 1500W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
less than 1μA
when V
BR
min>12V
• For surface mounted
applications to optimize
board space
• Low profile package
• Built-in strain relief
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic
applications.
Additional Infomarion
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• Glass passivated chip
junction
• High temperature
to reflow soldering
guaranteed: 260°C/40sec
• V
BR
@ T
J
= V
BR
@25°C
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value
is 0.1%)
• Plastic package is
flammability rated V-0 per
Underwriters Laboratories
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260
°
C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is
Pb-free and the terminal
finish material is tin(Sn)
(IPC/JEDEC J-STD-
609A.01)
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2), (Note 5)
Power Dissipation on Infinite Heat
Sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
Only (Note 4)
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
T
J
T
STG
R
θJL
R
θJA
Value
1500
6.5
200
3.5/5.0
-65 to 150
-65 to 175
15
75
Unit
W
W
A
V
°C
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
J
(initial) =25
O
C per Fig. 3.
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
4. V
F
< 3.5V for single die parts and V
F
< 5.0V for stacked-die parts.
5. The P
PPM
of stacked-die parts is 2000W and please contact littelfuse for the detail
stacked-die parts.
Functional Diagram
Bi-directional
Datasheet
Cathode
Uni-directional
Anode
Resources
Samples
© 2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/20/15

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