NYC0102BLT1G
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for highly−sensitive triggering in low-power
switching applications.
Features
Littelfuse.com
•
•
•
•
High dv/dt
Gating Current < 200
mA
Miniature SOT−23 Package for High Density PCB
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(R
GK
= IK, T
J
=
*40
to +110°C, Sine
Wave, 50 to 60 Hz
On-State Current RMS
(180° Conduction Angle, T
C
= 80°C)
Peak Non-repetitive Surge Current,
T
A
= 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
≤
1.0
msec,
T
A
= 25°C)
Forward Average Gate Power
(t = 8.3 msec, T
A
= 25°C)
Forward Peak Gate Current
(Pulse Width
≤
20
ms,
T
A
= 25°C)
Reverse Peak Gate Voltage
(Pulse Width
≤
1.0
ms,
T
A
= 25°C)
Operating Junction Temperature Range
@ Rated V
RRM
and V
DRM
Storage Temperature Range
Symbol
V
DRM,
V
RRM
200
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
stg
0.25
7.0
0.2
0.1
0.02
0.5
8.0
−40 to
+125
−40 to
+150
A
A
A
2
s
W
W
A
V
°C
°C
Value
Unit
V
0.25 AMP, 200 VOLT SCRs
G
A
K
3
1
2
MARKING
DIAGRAM
C2B MG
G
1
SOT−23
CASE 318
STYLE 8
C2B = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary de-
pending upon manufacturing location.
PIN ASSIGNMENT
1
2
3
Cathode
Gate
Anode
ORDERING INFORMATION
Device
NYC0102BLT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3000 / Tape &
Reel
3000 / Tape &
Reel
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
Symbol
P
D
225
R
qJA
380
mW
°C/W
Max
Unit
SZNYC0102BLT1G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev.
2
1
Publication Order Number:
NYC0102BL/D
NYC0102BLT1G
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward Blocking Current
(V
DRM
= 200 V, R
GK
= 1 kW)
Peak Repetitive Reverse Blocking Current
(V
DRM
= 200 V, R
GK
= 1 kW)
ON CHARACTERISTICS
Peak Forward On−State Voltage
(I
TM
= 0.4 A, t
p
< 1 ms, T
C
= 25°C)
Gate Trigger Current
(V
D
= 12 V, R
L
= 100
W,
T
C
= 25°C)
Gate Trigger Voltage
(V
D
= 12 V, R
L
= 100
W,
T
C
= 25°C)
Holding Current
(I
T
= 50 mA, R
GK
= 1 kW, T
C
= 25°C)
Gate Non−Trigger Voltage
(V
D
= V
DRM
, R
L
= 3.3 kW, T
C
= 125°C)
Latching Current
(I
G
= 1.0 mA, R
GK
= 1 kW, T
C
= 25°C)
Gate Reverse Voltage
(I
RG
= 10
mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(R
GK
= 1 kW, T
C
= 125°C)
Critical Rate of Rise of On−State Current
(I
G
= 2xI
GT
60 Hz, t
r
< 100 ns, T
J
= 125°C)
dv/dt
di/dt
200
−
−
−
−
50
V/ms
A/ms
V
TM
I
GT
V
GT
I
H
V
GD
I
L
V
RG
−
−
−
−
0.1
−
8.0
−
−
−
−
−
−
−
1.7
200
0.8
6.0
−
7.0
−
V
mA
V
mA
V
mA
V
I
DRM
T
C
= 25°C
T
C
= 125°C
I
RRM
T
C
= 25°C
T
C
= 125°C
−
−
−
−
1.0
100
−
−
−
−
1.0
100
mA
mA
mA
mA
Symbol
Min
Typ
Max
Unit
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev.
2
2
Publication Order Number:
NYC0102BL/D
NYC0102BLT1G
0.25
I
T
, AVERAGE CURRENT (A)
0.3
0.25
0.2
0.15
0.1
0.05
0
0
0.05
0.1
0.15
0.2
0
50
100
150
I
T
, AVERAGE CURRENT (A)
T, TEMPERATURE (°C)
DC
P, AVERAGE POWER (W)
0.2
0.15
180°
0.1
0.05
0
Figure 1. Maximum Average Power vs.
Average Current
7
TRANSIENT RESISTANCE
(NORMALIZED)
6
5
ITSM (A)
4
3
2
1
0
1
10
100
1000
NUMBER OF CYCLES
1
Figure 2. Current Derating
0.8
0.6
0.4
0.2
0
1.E−04 1.E−03 1.E−02 1.E−01 1.E+00 1.E+01 1.E+02 1.E+03
PULSE DURATION (s)
Figure 3. Surge Current ITSM vs. Number of
Cycles
Figure 4. Thermal Response
10
2
1.5
I
TM
, (A)
Gate
Open
R
GK
= 1k
1
125°C
25°C
1
0.5
0.1
0
0.5
1
1.5
V
TM
, (V)
2
2.5
0
200
250
300
T
J
, (K)
350
400
Figure 5. ON−State Characteristics
Figure 6. Gate Trigger Current vs. T
J
(Normalized to 255C)
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev.
2
3
Publication Order Number:
NYC0102BL/D
NYC0102BLT1G
2
0.07
0.06
1.5
Gate
Open
I
GT
(mA)
300
T
J
, (K)
350
400
R
GK
= 1k
0.05
0.04
0.03
0.02
0.01
0 200
250
0
0
2
4
6
R
GK
, (kW)
8
10
12
1
0.5
Figure 7. Gate Trigger Current vs. T
J
(Normalized to 255C)
25
2000
Figure 8. Gate Trigger Current vs. R
GK
20
1500
15
I
H
,I
L
(mA)
dV/dt (V/ms)
1000
10
5.0
500
0
0
1
2
3
4
6
5
R
GK
, (kW)
7
8
9
10
0
0
2
4
6
R
GK
, (kW)
8
10
12
Figure 9. Holding and Latching Current vs.
R
GK
Figure 10. dV/dt vs. R
GK
1.0
0.80
V
GT
(V)
0.60
0.40
0.20
0
200
250
300
T
J
, (K)
350
400
Figure 11. Gate Triggering Voltage vs. T
J
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev.
2
4
Publication Order Number:
NYC0102BL/D
NYC0102BLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)]
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
q
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
D
SEE VIEW C
3
E
HE
c
1
2
b
e
q
A
L
A1
L1
VIEW C
0.25
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military,
aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or
any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property
damage) other than those expressly set forth in applicable Littelfuse
product documentation. Warranties granted by
Littelfuse shall be
deemed void for products used for any purpose not expressly set forth in applicable Littelfuse
documentation. Littelfuse shall not be
liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in
applicable Littelfuse documentation. The sale and use of Littelfuse
products is subject to Littelfuse Terms and Conditions of Sale,
unless otherwise agreed by Littelfuse.
Littelfuse.com
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev.
2
5
Publication Order Number:
NYC0102BL/D
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