Specifications are subject to change without notice.
Revised: 10/11/17
Thyristors
Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN
Maximum Ratings
(T
J
= 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(− 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
MCR12DCM
MCR12DCN
V
DRM
,
V
RRM
600
800
I
T
12
7
.8
V
On-State RMS Current (180º Conduction Angles; T
C
= 90°C)
Average On−State Current (180º Conduction Angles; T
C
= 90°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power (Pulse Width ≤ 10 µsec,T
C
= 90°C)
Forward Average Gate Power (t = 8.3 msec, T
C
= 90°C)
Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, T
C
= 90°C)
Operating Junction Temperature Range
Storage Temperature Range
(RMS)
A
A
I
T(AV)
I
TSM
I
2
t
P
GM
P
GM (AV)
I
GM
T
J
T
stg
100
A
41
5.0
0.5
2.0
-40 to 110
-40 to 150
A²sec
W
W
A
°C
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating
conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for
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