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BZT52C5V1S-TP

Description
Maximum power: 200mW Accuracy: - Reverse leakage current: 2uA @ 2V Regulated voltage value (typical value): 5.1V
CategoryDiscrete semiconductor    Zener diode   
File Size526KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BZT52C5V1S-TP Overview

Maximum power: 200mW Accuracy: - Reverse leakage current: 2uA @ 2V Regulated voltage value (typical value): 5.1V

BZT52C5V1S-TP Parametric

Parameter NameAttribute value
Maximum power200mW
Accuracy-
Reverse leakage current2uA @ 2V
Stable voltage value (typical value)5.1V
BZT52C2V4S THRU BZT52C56S
Features
Planar Die Construction
Ideally Suited for Automated Assembly Processes
General Purpose Medium Current
Halogen Free Available Upon Request By Adding Suffix "-HF"
Moisture Sensitivity Level 1
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant
t
("P" Suffix
Designates
RoHS
Compliant. See
Ordering Information)
200 mW
Zener Diode
2.4 to 56 Volts
Maximum Ratings
Operating Junction Temperature Range:
-65°C to +150°C
Storage Temperature Range:
-65°C to +150°C
Thermal Resistance
:625°C/W
Junction to Ambient
Parameter
Power Dissipation
Maximum Forward
Voltage
Symbol
P
D
V
F
Rating
200mW
0.9V
I
F
=10mA
Conditions
C
SOD-323
A
B
E
Cathode Mark
H
D
G
J
DIM
A
B
C
D
E
G
H
J
DIMENSIONS
INCHES
MM
MIN MAX MIN MAX
0.090
0.107
2.30
2.70
0.063 0.071 1.60 1.80
0.045 0.053 1.15 1.35
0.031
0.045
0.80
1.15
0.010 0.016 0.25 0.40
0.004 0.018 0.10 0.45
0.004 0.010 0.10 0.25
----- 0.006 ----- 0.15
NOTE
Suggested Solder Pad Layout
1.88mm
0.69mm
0.56mm
Rev.3-1-01012019
1/4
MCCSEMI.COM
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