SO
T3
23
BAT54W series
Schottky barrier diodes
Rev. 3 — 20 November 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diodes with an integrated guard ring for stress protection,
encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic
package.
1.2 Features and benefits
Low forward voltage
Low capacitance
AEC-Q101 qualified
1.3 Applications
Ultra high-speed switching
Line termination
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
R
V
F
I
R
[1]
Parameter
reverse voltage
forward voltage
reverse current
Conditions
Min
-
Typ
-
-
-
Max
30
800
2
Unit
V
mV
A
I
F
= 100 mA
V
R
= 25 V
[1]
[1]
-
-
Pulse test: t
p
300
s;
0.02.
2. Pinning information
Table 2.
Pin
BAT54W
1
2
3
anode
not connected
cathode
1
2
3
1
3
2
n.c.
006aaa436
Pinning
Description
Simplified outline
Graphic symbol
NXP Semiconductors
BAT54W series
Schottky barrier diodes
Pinning
…continued
Description
cathode (diode 1)
cathode (diode 2)
common anode
1
2
3
1
3
2
006aaa439
Table 2.
Pin
BAT54AW
1
2
3
Simplified outline
Graphic symbol
BAT54CW
1
2
3
anode (diode 1)
anode (diode 2)
common cathode
1
2
3
1
3
2
006aac984
BAT54SW
1
2
3
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
1
2
3
1
3
2
006aaa437
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT54W series
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Type number
4. Marking
Table 4.
BAT54W
BAT54AW
BAT54CW
BAT54SW
[1]
* = placeholder for manufacturing site code.
Marking codes
Marking code
[1]
L4*
42*
43*
44*
Type number
BAT54W_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 20 November 2012
2 of 11
NXP Semiconductors
BAT54W series
Schottky barrier diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FRM
I
FSM
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
T
j
= 25
C
before surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Parameter
Conditions
Min
-
-
Max
30
200
300
Unit
V
mA
mA
mA
t
p
1 s;
0.5
square wave;
t
p
< 10 ms
T
amb
25
C
[1]
-
600
Per device; one diode loaded
P
tot
T
j
T
amb
T
stg
[1]
[2]
[2]
-
-
55
65
200
150
+150
+150
mW
C
C
C
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
625
Unit
K/W
Per device; one diode loaded
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BAT54W_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 20 November 2012
3 of 11
NXP Semiconductors
BAT54W series
Schottky barrier diodes
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
t
rr
[1]
[2]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
[1]
-
-
-
-
-
-
-
-
240
320
400
500
800
2
10
5
mV
mV
mV
mV
mV
A
pF
ns
reverse current
diode capacitance
reverse recovery time
Pulse test: t
p
300
s;
0.02.
V
R
= 25 V
f = 1 MHz; V
R
= 1 V
-
-
-
[2]
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
10
3
I
F
(mA)
10
2
(1)
006aac829
(3)
(2)
,
5
DDD
10
(1)
(2)
(3)
1
10
-1
0.0
0.4
0.8
V
F
(V)
1.2
9
5
(1) T
amb
= 125
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
(1) T
amb
= 125
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
BAT54W_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 20 November 2012
4 of 11
NXP Semiconductors
BAT54W series
Schottky barrier diodes
10
C
d
(pF)
8
006aac891
6
4
2
0
0
10
20
V
R
(V)
30
f = 1 MHz; T
amb
= 25
C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
(1) I
R
= 1 mA
Fig 4.
Reverse recovery time test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
BAT54W_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 20 November 2012
5 of 11
京公网安备 11010802033920号
EEWORLD
