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BUK9Y107-80EX

CategoryDiscrete semiconductor    The transistor   
File Size738KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK9Y107-80EX Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts4
Manufacturer packaging codeSOT669
Reach Compliance Codecompliant
Factory Lead Time26 weeks
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID1455717
Samacsys Pin Count5
Samacsys Part CategoryMOSFET (N-Channel)
Samacsys Package CategoryOther
Samacsys Footprint NameLFPAK56; PowerSO8 (SOT669)
Samacsys Released Date2018-11-20 18:15:23
Is SamacsysN
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)9.4 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)11.8 A
Maximum drain-source on-resistance0.107 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)47 A
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK9Y107-80E
8 May 2013
N-channel 80 V, 107 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
80
11.8
37
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
89.7
107
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 5 A; V
DS
= 64 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
2.5
-
nC
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