EEWORLDEEWORLDEEWORLD

Part Number

Search

PHPT61003NYX

CategoryDiscrete semiconductor    The transistor   
File Size724KB,17 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

PHPT61003NYX Online Shopping

Suppliers Part Number Price MOQ In stock  
PHPT61003NYX - - View Buy Now

PHPT61003NYX Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSOIC
package instructionSOP-8, 4 PIN
Contacts4
Manufacturer packaging codeSOT669
Reach Compliance Codecompliant
Factory Lead Time8 weeks
Samacsys Description100 V, 3 A NPN high power bipolar transistor
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
PHPT61003NY
11 September 2015
100 V, 3 A NPN high power bipolar transistor
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
PNP complement: PHPT61003PY
2. Features and benefits
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Power management
Loadswitch
Linear mode voltage regulator
Backlighting applications
4. Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
single pulse; t
p
≤ 1 ms
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
I
C
= 3 A; I
B
= 300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
75
110
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
90
Max
100
3
8
150
Unit
V
A
A
Looking for AT45DB321D Chinese datasheet
As the title says, the English is driving me crazy~...
zzbaizhi Microcontroller MCU
How to measure inductance
How to measure inductance using the bridge method?...
huacong5419 FPGA/CPLD
How to drive the thermal printer with LTP1245? Does anyone have the code?
How to drive the thermal printer with LTP1245? Does anyone have the code or circuit?...
QQ1050409603 51mcu
Has anyone written a serial communication program in a DOS environment? Please give me some advice. I don't know how to add flow control function. . . .
Now the basic serial port program has been compiled under Borland C++4.5, but I don't know how to add flow control function. Should I add statements such as outportb(portbase[port] + MCR, inportb(port...
weijinping Embedded System
Basic concepts of amplifier circuits and three basic connections
In order to make it easier for everyone to understand the amplifier circuit, let’s first introduce some basic concepts of the amplifier circuit. (1) Input resistance and output resistanceAn amplifier ...
fish001 Analogue and Mixed Signal
23Mar
Although modern washing machines can make a sound to remind people after washing is finished, many Internet addicts may find it difficult to hear such an alarm due to their over-focused attention. The...
xyh_521 Creative Market

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 508  2141  2323  2786  554  11  44  47  57  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号