BUK7880-55A
19 June 2015
N-channel TrenchMOS standard level FET
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use
in automotive critical applications.
2. Features and benefits
•
•
•
AEC Q101 compliant
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
3. Applications
•
•
•
•
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 150 °C
V
GS
= 10 V; T
sp
= 25 °C;
Fig. 2; Fig. 3
T
sp
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 9; Fig. 10
I
D
= 7 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
-
53
mJ
Min
-
-
-
Typ
-
-
-
Max
55
7
8
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
68
80
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
Nexperia
BUK7880-55A
N-channel TrenchMOS standard level FET
5. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
drain
G
Simplified outline
4
Graphic symbol
D
1
2
3
SC-73 (SOT223)
mbb076
S
6. Ordering information
Table 3.
Ordering information
Package
Name
BUK7880-55A
BUK7880-55A/CU
SC-73
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
SOT223
Type number
7. Marking
Table 4.
Marking codes
Marking code
788055A
788055
Type number
BUK7880-55A
BUK7880-55A/CU
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
P
tot
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
T
sp
= 25 °C;
Fig. 1
T
sp
= 100 °C; V
GS
= 10 V;
Fig. 2
T
sp
= 25 °C; V
GS
= 10 V;
Fig. 2; Fig. 3
I
DM
BUK7880-55A
Conditions
T
j
≥ 25 °C; T
j
≤ 150 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
©
Max
55
55
20
8
5
7
30
Unit
V
V
V
W
A
A
A
peak drain current
T
sp
= 25 °C; pulsed; t
p
≤ 10 µs;
Fig. 3
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 June 2015
2 / 12
Nexperia
BUK7880-55A
N-channel TrenchMOS standard level FET
Symbol
T
stg
T
j
I
S
I
SM
E
DS(AL)S
E
DS(AL)R
Parameter
storage temperature
junction temperature
Conditions
Min
-55
-55
Max
150
150
Unit
°C
°C
Source-drain diode
source current
peak source current
T
sp
= 25 °C
pulsed; t
p
≤ 10 µs; T
sp
= 25 °C
I
D
= 7 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
Fig. 4
[1][2][3][4]
-
-
-
7
30
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
[1]
[2]
[3]
[4]
120
P
der
(%)
80
-
53
-
mJ
J
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
Single-pulse avalanche rating limited by maximum junction temperature of 150 °C.
Repetitive avalanche rating limited by an average junction temperature of 150 °C
Refer to application note AN10273 for further information.
03aa17
8
I
D
(A)
6
003aab532
4
40
2
0
0
50
100
150
T
sp
(°C)
200
0
0
50
100
T
sp
(°C)
150
Fig. 1.
Normalized total power dissipation as a
function of solder point temperature
Fig. 2.
Continuous drain current as a function of solder
point temperature
BUK7880-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 June 2015
3 / 12
Nexperia
BUK7880-55A
N-channel TrenchMOS standard level FET
10
2
I
D
(A)
10
Limit R
DSon
= V
DS
/ I
D
003aab530
t
p
= 10 µ s
100 µ s
1 ms
1
DC
10 ms
100 ms
10
-1
10
-1
1
10
V
DS
(V)
10
2
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
I
AL
(A)
1
(1)
003aab528
(2)
(3)
10
-1
10
-2
10
-3
10
-2
10
-1
1 t (ms) 10
AL
Fig. 4.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to solder
point
thermal resistance
from junction to
ambient
Conditions
Min
-
Typ
-
Max
15
Unit
K/W
R
th(j-a)
-
120
-
K/W
BUK7880-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 June 2015
4 / 12
Nexperia
BUK7880-55A
N-channel TrenchMOS standard level FET
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 8
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 8
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 150 °C;
Fig. 8
I
DSS
I
GSS
drain leakage current
gate leakage current
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A; T
j
= 150 °C;
Fig. 9; Fig. 10
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 9; Fig. 10
I
DSS
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
r
drain leakage current
V
DS
= 55 V; V
GS
= 0 V; T
j
= 150 °C
I
D
= 10 A; V
DS
= 44 V; V
GS
= 10 V;
Fig. 11
-
-
500
µA
-
68
80
mΩ
-
-
-
-
0.05
2
2
-
10
100
100
148
µA
nA
nA
mΩ
1.2
-
-
V
Min
55
50
2
-
Typ
-
-
3
-
Max
-
-
4
4.4
Unit
V
V
V
V
Static characteristics
V
GS(th)
V
GSth
Dynamic characteristics
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
V
DS
= 30 V; R
L
= 1.2 Ω; V
GS
= 10 V;
R
G(ext)
= 10 Ω
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C;
Fig. 12
-
-
-
-
-
-
-
-
-
-
12
2.5
5
374
92
62
8
52
17
9
-
-
-
500
110
85
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Source-drain diode
source-drain voltage
reverse recovery time
recovered charge
I
S
= 15 A; V
GS
= 0 V; T
j
= 25 °C;
Fig. 13
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V
-
-
-
0.85
33
31
1.2
-
-
V
ns
nC
BUK7880-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 June 2015
5 / 12
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